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参数资料
| 型号： | HGTG30N60C3D |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/8页 |
| 文件大小： | 0K |
| 描述： | IGBT N-CH UFS 600V 30A TO-247 |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品变化通告： | Lead Frame Change 20/Dec/2007 |
| 产品目录绘图： | IGBT TO-247 Package |
| 标准包装： | 150 |
| 电压 - 集电极发射极击穿（最大）： | 600V |
| Vge, Ic时的最大Vce（开）： | 1.8V @ 15V，30A |
| 电流 - 集电极 (Ic)（最大）： | 63A |
| 功率 - 最大： | 208W |
| 输入类型： | 标准 |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-247-3 |
| 供应商设备封装： | TO-247 |
| 包装： | 管件 |
| 产品目录页面： | 1610 (CN2011-ZH PDF) |
HGTG30N60C3D
Absolute Maximum Ratings T C = 25 o C, Unless Otherwise Specified
HGTG30N60C3D
UNITS
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV CES
Collector Current Continuous
At T C = 25 o C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I C25
At T C = 110 o C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I C110
Average Diode Forward Current at 110 o C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I (AVG)
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I CM
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V GES
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V GEM
Switching Safe Operating Area at T J = 150 o C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . SSOA
Power Dissipation Total at T C = 25 o C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P D
Power Dissipation Derating T C > 25 o C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T J , T STG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T L
Short Circuit Withstand Time (Note 2) at V GE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t SC
Short Circuit Withstand Time (Note 2) at V GE = 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . t SC
600
63
30
25
252
± 20
± 30
60A at 600V
208
1.67
-40 to 150
260
4
15
V
A
A
A
A
V
V
W
W/ o C
o C
o C
μ s
μ s
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. V CE(PK) = 360V, T J = 125 o C, R G = 25 ?.
Electrical Specifications
T C = 25 o C, Unless Otherwise Specified
PARAMETER
Collector to Emitter Breakdown Voltage
Emitter to Collector Breakdown Voltage
SYMBOL
BV CES
BV ECS
TEST CONDITIONS
I C = 250 μ A, V GE = 0V
I C = 10mA, V GE = 0V
MIN
600
15
TYP
-
25
MAX
-
-
UNITS
V
V
Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
Gate to Emitter Threshold Voltage
I CES
V CE(SAT)
V GE(TH)
V CE = BV CES
V CE = BV CES
I C = I C110 ,
V GE = 15V
I C = 250 μ A,
T C = 25 o C
T C = 150 o C
T C = 25 o C
T C = 150 o C
T C = 25 o C
-
-
-
-
3.0
-
-
1.5
1.7
5.2
250
3.0
1.8
2.0
6.0
μ A
mA
V
V
V
V CE = V GE
Gate to Emitter Leakage Current
I GES
V GE = ± 20V
-
-
± 100
nA
Switching SOA
SSOA
T J = 150 o C,
V GE = 15V,
R G = 3 ?,
L = 100 μ H
V CE(PK) = 480V
V CE(PK) = 600V
200
60
-
-
-
-
A
A
Gate to Emitter Plateau Voltage
V GEP
I C = I C110 , V CE = 0.5 BV CES
-
8.1
-
V
On-State Gate Charge
Q G(ON)
I C = I C110 ,
V CE = 0.5 BV CES
V GE = 15V
V GE = 20V
-
-
162
216
180
250
nC
nC
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy
Turn-Off Energy (Note 3)
Diode Forward Voltage
t d(ON)I
t rI
t d(OFF)I
t fI
E ON
E OFF
V EC
T J = 150 o C,
I CE = I C110,
V CE(PK) = 0.8 BV CES,
V GE = 15V,
R G = 3 ?,
L = 100 μ H
I EC = 30A
-
-
-
-
-
-
-
40
45
320
230
1050
2500
1.75
-
-
400
275
-
-
2.2
ns
ns
ns
ns
μ J
μ J
V
?2009 Fairchild Semiconductor Corporation
HGTG30N60C3D Rev. B
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