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参数资料
| 型号： | HGTG30N60C3D |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 8/8页 |
| 文件大小： | 0K |
| 描述： | IGBT N-CH UFS 600V 30A TO-247 |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品变化通告： | Lead Frame Change 20/Dec/2007 |
| 产品目录绘图： | IGBT TO-247 Package |
| 标准包装： | 150 |
| 电压 - 集电极发射极击穿（最大）： | 600V |
| Vge, Ic时的最大Vce（开）： | 1.8V @ 15V，30A |
| 电流 - 集电极 (Ic)（最大）： | 63A |
| 功率 - 最大： | 208W |
| 输入类型： | 标准 |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-247-3 |
| 供应商设备封装： | TO-247 |
| 包装： | 管件 |
| 产品目录页面： | 1610 (CN2011-ZH PDF) |
HGTG30N60C3D
Handling Precautions for IGBTs
Insulated Gate Bipolar Transistors are susceptible to gate-
insulation damage by the electrostatic discharge of energy
through the devices. When handling these devices, care
should be exercised to assure that the static charge built in
the handler’s body capacitance is not discharged through the
device. With proper handling and application procedures,
however, IGBTs are currently being extensively used in
production by numerous equipment manufacturers in military,
industrial and consumer applications, with virtually no damage
problems due to electrostatic discharge. IGBTs can be
handled safely if the following basic precautions are taken:
1. Prior to assembly into a circuit, all leads should be kept
shorted together either by the use of metal shorting
springs or by the insertion into conductive material such
as “ECCOSORBD ? LD26” or equivalent.
2. When devices are removed by hand from their carriers,
the hand being used should be grounded by any suitable
means - for example, with a metallic wristband.
3. Tips of soldering irons should be grounded.
4. Devices should never be inserted into or removed from
circuits with power on.
5. Gate Voltage Rating - Never exceed the gate-voltage
rating of V GEM . Exceeding the rated V GE can result in
permanent damage to the oxide layer in the gate region.
6. Gate Termination - The gates of these devices are
essentially capacitors. Circuits that leave the gate
open-circuited or floating should be avoided. These
conditions can result in turn-on of the device due to voltage
buildup on the input capacitor due to leakage currents or
pickup.
7. Gate Protection - These devices do not have an internal
monolithic zener diode from gate to emitter. If gate
protection is required an external zener is recommended.
?2009 Fairchild Semiconductor Corporation
Operating Frequency Information
Operating frequency information for a typical device (Figure 13)
is presented as a guide for estimating device performance
for a specific application. Other typical frequency vs collector
current (I CE ) plots are possible using the information shown
for a typical unit in Figures 4, 7, 8, 11 and 12. The operating
frequency plot (Figure 13) of a typical device shows f MAX1 or
f MAX2 whichever is smaller at each point. The information is
based on measurements of a typical device and is bounded
by the maximum rated junction temperature.
f MAX1 is defined by f MAX1 = 0.05/(t D(OFF)I + t D(ON)I ).
Deadtime (the denominator) has been arbitrarily held to 10%
of the on-state time for a 50% duty factor. Other definitions
are possible. t D(OFF)I and t D(ON)I are defined in Figure 21.
Device turn-off delay can establish an additional frequency
limiting condition for an application other than T JM . t D(OFF)I
is important when controlling output ripple under a lightly
loaded condition.
f MAX2 is defined by f MAX2 = (P D - P C )/(E OFF + E ON ). The
allowable dissipation (P D ) is defined by P D = (T JM - T C )/R θ JC .
The sum of device switching and conduction losses must
not exceed P D . A 50% duty factor was used (Figure 13)
and the conduction losses (P C ) are approximated by
P C = (V CE x I CE )/2.
E ON and E OFF are defined in the switching waveforms
shown in Figure 21. E ON is the integral of the instantaneous
power loss (I CE x V CE ) during turn-on and E OFF is the
integral of the instantaneous power loss during turn-off. All
tail losses are included in the calculation for E OFF ; i.e. the
collector current equals zero (I CE = 0).
HGTG30N60C3D Rev. B
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相关代理商/技术参数 |
参数描述 |
|---|---|
| HGTG30N60C3D | 制造商:Fairchild Semiconductor Corporation 功能描述:SINGLE IGBT 600V 63A |
| HGTG30N60C3D_NL | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| HGTG32N60E2 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| HGTG32N60E2R4511 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| HGTG32N60ER3431 | 制造商:Harris Corporation 功能描述: |
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