参数资料
型号: HGTG30N60C3D
厂商: Fairchild Semiconductor
文件页数: 4/8页
文件大小: 0K
描述: IGBT N-CH UFS 600V 30A TO-247
产品培训模块: High Voltage Switches for Power Processing
产品变化通告: Lead Frame Change 20/Dec/2007
产品目录绘图: IGBT TO-247 Package
标准包装: 150
电压 - 集电极发射极击穿(最大): 600V
Vge, Ic时的最大Vce(开): 1.8V @ 15V,30A
电流 - 集电极 (Ic)(最大): 63A
功率 - 最大: 208W
输入类型: 标准
安装类型: 通孔
封装/外壳: TO-247-3
供应商设备封装: TO-247
包装: 管件
产品目录页面: 1610 (CN2011-ZH PDF)
HGTG30N60C3D
Typical Performance Curves
(Continued)
70
V GE = 15V
25
V CE = 360V, R G = 25 ? , T J = 125 o C
500
60
450
50
20
I SC
400
40
15
350
300
30
250
20
10
10
t SC
200
150
0
25
50
75 100 125
T C , CASE TEMPERATURE ( o C)
150
5
10
11 12 13 14
V GE , GATE TO EMITTER VOLTAGE (V)
15
100
FIGURE 5. MAX. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 6. SHORT CIRCUIT WITHSTAND TIME
200
T J = 150 o C, R G = 3 ? , L = 100 μ H, V CE(PK) = 480V
500
T J = 150 o C, R G = 3 ? , L = 100 μ H, V CE(PK) = 480V
400
100
V GE = 10V
300
V GE = 15V
50
40
30
V GE = 15V
200
V GE = 10V
20
10
100
10
20
30
40
50
60
10
20 30 40
50
60
I CE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 7. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
I CE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 8. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
500
T J = 150 o C, R G = 3 ? , L = 100 μ H, V CE(PK) = 480V
500
T J = 150 o C, R G = 3 ? , L = 100 μ H, V CE(PK) = 480V
400
100
V GE = 10V
300
V GE = 10V
200
V GE = 15V
V GE = 15V
10
10
20 30 40
50
60
100
10
20
30
40
50
60
I CE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
?2009 Fairchild Semiconductor Corporation
I CE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10. TURN-OFF FALL TIME vs COLLECTOR TO
EMITTER CURRENT
HGTG30N60C3D Rev. B
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