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参数资料
| 型号： | HGTG30N60C3D |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 3/8页 |
| 文件大小： | 0K |
| 描述： | IGBT N-CH UFS 600V 30A TO-247 |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品变化通告： | Lead Frame Change 20/Dec/2007 |
| 产品目录绘图： | IGBT TO-247 Package |
| 标准包装： | 150 |
| 电压 - 集电极发射极击穿（最大）： | 600V |
| Vge, Ic时的最大Vce（开）： | 1.8V @ 15V，30A |
| 电流 - 集电极 (Ic)（最大）： | 63A |
| 功率 - 最大： | 208W |
| 输入类型： | 标准 |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-247-3 |
| 供应商设备封装： | TO-247 |
| 包装： | 管件 |
| 产品目录页面： | 1610 (CN2011-ZH PDF) |
HGTG30N60C3D
Electrical Specifications
T C = 25 o C, Unless Otherwise Specified
PARAMETER
Diode Reverse Recovery Time
Thermal Resistance
SYMBOL
t rr
R θ JC
TEST CONDITIONS
I EC = 30A, dI EC /dt = 100A/ μ s
I EC = 1.0A, dI EC /dt = 100A/ μ s
IGBT
Diode
MIN
-
-
-
-
TYP
52
42
-
-
MAX
60
50
0.6
1.3
UNITS
ns
ns
o C/W
o C/W
NOTE:
3. Turn-Off Energy Loss (E OFF ) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (I CE = 0A). The HGTG30N60C3D was tested per JEDEC standard No. 24-1 Method for
Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-On losses include
diode losses.
Typical Performance Curves
150
PULSE DURATION = 250 μ s
150
PULSE DURATION = 250 μ s, DUTY CYCLE <0.5%, T C = 25 o C
125
100
75
50
25
DUTY CYCLE <0.5%, V CE = 10V
T C = 150 o C
T C = 25 o C
T C = -40 o C
125
100
75
50
25
V GE = 15.0V
12.0V
7.0V
10.0V
9.5V
9.0V
8.5V
8.0V
7.5V
0
4
6 8 10
12
0
0
2
4
6
8
10
V GE , GATE TO EMITTER VOLTAGE (V)
FIGURE 1. TRANSFER CHARACTERISTICS
V CE , COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 2. SATURATION CHARACTERISTICS
150
125
100
PULSE DURATION = 250 μ s
DUTY CYCLE <0.5%, V GE = 10V
T C = -40 o C
T C = 25 o C
150
125
100
PULSE DURATION = 250 μ s
DUTY CYCLE <0.5%
V GE = 15V
T C = -40 o C
T C = 150 o C
T C = 25 o C
75
50
25
T C = 150 o C
75
50
25
0
0
1 2 3 4
5
0
0
1
2
3
4
5
V CE , COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 3. COLLECTOR TO EMITTER ON-STATE VOLTAGE
?2009 Fairchild Semiconductor Corporation
V CE , COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 4. COLLECTOR TO EMITTER ON-STATE VOLTAGE
HGTG30N60C3D Rev. B
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PDF描述 |
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| HGTP20N60A4 | IGBT N-CH SMPS 600V 70A TO220AB |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| HGTG30N60C3D | 制造商:Fairchild Semiconductor Corporation 功能描述:SINGLE IGBT 600V 63A |
| HGTG30N60C3D_NL | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| HGTG32N60E2 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| HGTG32N60E2R4511 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| HGTG32N60ER3431 | 制造商:Harris Corporation 功能描述: |
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