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参数资料
| 型号： | HGTG30N60C3D |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 5/8页 |
| 文件大小： | 0K |
| 描述： | IGBT N-CH UFS 600V 30A TO-247 |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品变化通告： | Lead Frame Change 20/Dec/2007 |
| 产品目录绘图： | IGBT TO-247 Package |
| 标准包装： | 150 |
| 电压 - 集电极发射极击穿（最大）： | 600V |
| Vge, Ic时的最大Vce（开）： | 1.8V @ 15V，30A |
| 电流 - 集电极 (Ic)（最大）： | 63A |
| 功率 - 最大： | 208W |
| 输入类型： | 标准 |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-247-3 |
| 供应商设备封装： | TO-247 |
| 包装： | 管件 |
| 产品目录页面： | 1610 (CN2011-ZH PDF) |
HGTG30N60C3D
Typical Performance Curves
(Continued)
8.0
7.0
T J = 150 o C, R G = 3 ? , L = 100 μ H, V CE(PK) = 480V
6.0
5.0
T J = 150 o C, R G = 3 ? , L = 100 μ H, V CE(PK) = 480V
6.0
5.0
4.0
3.0
2.0
1.0
V GE = 15V
V GE = 10V
4.0
3.0
2.0
1.0
V GE = 10V or 15V
0
10
20
30
40
50
60
0
10
20 30 40 50
60
I CE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
I CE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
500
T J = 150 o C, T C = 75 o C
R G = 3 ? , L = 100 μ H
250
200
T J = 150 o C, V GE = 15V, L = 100 μ H
100
V GE = 15V
150
10
f MAX1 = 0.05/(t D(OFF)I + t D(ON)I )
f MAX2 = (P D - P C )/(E ON + E OFF )
P D = ALLOWABLE DISSIPATION
P C = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
V GE = 10V
100
50
LIMITED BY
CIRCUIT
R θ JC = 0.6 o C/W
1
5
10 20 30 40
60
0
0
100
200
300
400
500
600
I CE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
V CE , COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 14. SWITCHING SAFE OPERATING AREA
8000
FREQUENCY = 400kHz
600
I G (REF) = 3.54mA, R L = 20 ? , T C = 25 o C
15
7000
C IES
6000
480
12
V CE = 600V
5000
4000
360
9
3000
2000
C OES
240
120
V CE = 400V
V CE = 200V
6
3
1000
C RES
0
0
5
10
15
20
25
0
0
40
80 120
160
0
200
V CE , COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
?2009 Fairchild Semiconductor Corporation
Q G , GATE CHARGE (nC)
FIGURE 16. GATE CHARGE WAVEFORMS
HGTG30N60C3D Rev. B
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相关代理商/技术参数 |
参数描述 |
|---|---|
| HGTG30N60C3D | 制造商:Fairchild Semiconductor Corporation 功能描述:SINGLE IGBT 600V 63A |
| HGTG30N60C3D_NL | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| HGTG32N60E2 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| HGTG32N60E2R4511 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| HGTG32N60ER3431 | 制造商:Harris Corporation 功能描述: |
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