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参数资料
| 型号： | HIP2122FRTBZ-T |
| 厂商： | Intersil |
| 文件页数： | 12/16页 |
| 文件大小： | 0K |
| 描述： | IC INTERFACE |
| 标准包装： | 6,000 |
| 系列： | * |
HIP2122, HIP2123
Q c = Q gate80V + Period x (I HB + V HO /R GS + I gate_leak )
C boot = Q c /(Ripple * VDD)
C boot = 0.52μF
If the gate to source resistor is removed (R GS is usually not
needed or recommended), then:
L is the total parasitic inductance of the low-side FET drain-
source path and di/dt is the rate at which the high-side FET is
turned off. With the increasing power levels of power supplies
and motor, clamping this transient become more and more
significant for the proper operation of the HIP2122/23.
C boot = 0.33μF
HO
IN D U C T IV E
Typical Application Circuit
Figure 23 is an example of how the HIP2122/23 can be
configured for a half bridge power supply application.
Depending on the application, the switching speed of the bridge
HS
LO
VSS
-
+
-
+
LO AD
FETs can be reduced by adding series connected resistors
between the xHO outputs and the FET gates. Gate-Source
resistors are recommended on the low Side FETs to prevent
unexpected turn-on of the bridge should the bridge voltage be
applied before VDD. Gate-source resistors on the high side FETs
are not usually required if low-side gate-source resistors are
used. If relatively small gate-source resistors are used on the
high-side FETs, be aware that they will load the boot capacitor,
which will then require a larger value for the boot capacitor.
Transients on HS Node
An important operating condition that is frequently overlooked by
designers is the negative transient on the xHS pins that occurs
when the high side bridge FET turns off. The Absolute Maximum
transient allowed on the xHS pin is -6V but it is wise to minimize
the amplitude to lower levels. This transient is the result of the
parasitic inductance of the low-side drain-source conductor on
the PCB. Even the parasitic inductance of the low-side FET
contributes to this transient.
When the high-side bridge FET turns off (see Figure 22), because
of the inductive characteristics of the load, the current that was
flowing in the high-side FET (blue) must rapidly commutate to
flow through the low side FET (red). The amplitude of the
negative transient impressed on the xHS node is (di/dt x L) where
8-15V
FIGURE 22. PARASITIC INDUCTANCE CAUSES TRANSIENTS ON HS
NODE
There are several ways of reducing the amplitude of this
transient. If the bridge FETs are turned off more slowly to reduce
di/dt, the amplitude will be reduced but at the expense of more
switching losses in the FETs. Careful PCB design will also reduce
the value of the parasitic inductance. However, these two
solutions by themselves may not be sufficient. Figure 22
illustrates a simple method for clamping the negative transient.
A fast PN junction, 1A diode is connected between xHS and VSS
as shown. It is important that this diode be placed as close as
possible to the xHS and VSS pins to minimize the parasitic
inductance of this current path. Because this clamping diode is
essentially in parallel with the body diode of the low side FET, a
small value resistor is necessary to limit current when the body
diode of the low side bridge FET is conducting during the dead
time.
Please note that a similar transient with a positive polarity occurs
when the low-side FET turns off. This is less frequently a problem
because xHS node is floating up toward the bridge bias voltage.
The Absolute Max voltage rating for the xHS node does need to
be observed when the positive transient occurs.
VDD
HB
100V MAX
PWM
HI
DRIVER
HO
PWM
CONTROLLER
EN
HS
RDT
LO
DRIVER
LO
VSS
ISL78420
FIGURE 23. TYPICAL HALF BRIDGE APPLICATION
12
FN7670.0
December 23, 2011
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相关代理商/技术参数 |
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|---|---|
| HIP2123 | 制造商:INTERSIL 制造商全称:Intersil Corporation 功能描述:100V, 2A Peak, High Frequency Half-Bridge Drivers with Rising Edge Delay Timer |
| HIP2123FRTAZ | 功能描述:功率驱动器IC 100V 2A PEAK HALF BRDG DRV W/DELAY TMR RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| HIP2123FRTAZ-T | 功能描述:功率驱动器IC 100V 2A PEAK HALF BRDG DRV W/DELAY TMR RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| HIP2123FRTBZ | 功能描述:功率驱动器IC 100V 2A PEAK HALF BRDG DRV W/DELAY TMR RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| HIP2123FRTBZ-T | 功能描述:功率驱动器IC 100V 2A PEAK HALF BRDG DRV W/DELAY TMR RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
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