- 您现在的位置：买卖IC网 > PDF目录20577 > HIP2122FRTBZ-T (Intersil)IC INTERFACE PDF资料下载
参数资料
| 型号： | HIP2122FRTBZ-T |
| 厂商： | Intersil |
| 文件页数： | 7/16页 |
| 文件大小： | 0K |
| 描述： | IC INTERFACE |
| 标准包装： | 6,000 |
| 系列： | * |
HIP2122, HIP2123
Switching Specifications
V DD = V HB = 12V, V SS = V HS = 0V, RDT = 0k Ω , No Load on LO or HO, Unless Otherwise Specified.
T J = +25°C
T J = -40°C to +125°C
PARAMETERS
TEST
MIN
MAX
(see “Timing Diagram”)
HO Turn-Off Propagation Delay
HI Falling to HO Falling
LO Turn-Off Propagation Delay
LO Falling to LO Falling
Minimum Dead-Time Delay (see Note 10)
HO Falling to LO Rising
Minimum Dead-Time Delay (see Note 10)
LO Falling to HO Rising
Maximum Dead-Rising Delay (see Note 10)
HO Falling to LO rising
Maximum Dead-Time Delay (see Note 10)
LO Falling to HO Rising
Either Output Rise/Fall Time
(10% to 90%/90% to 10%)
Either Output Rise/Fall Time
(3V to 9V/9V to 3V)
Bootstrap Diode Turn-On or Turn-Off Time
SYMBOL
t PLHO
t PLLO
t DTHLmin
t DTLHmin
t DTHLmax
t DTLHmax
t RC, t FC
t R, t F
t BS
CONDITIONS
R DT = 80k,
HI 1 to 0, LI 0 to 1
R DT = 80k
Li 1 to 0, HI 0 to 1
R DT = 8k,
HI 1 to 0, LI 0 to 1
R DT = 8k,
Li 1 to 0, HI 0 to 1
C L = 1nF
C L = 0.1mF
MIN
-
-
15
15
150
150
-
-
-
TYPE
32
32
35
25
220
220
10
0.5
10
MAX
50
50
50
50
300
300
-
0.6
-
(Note 9)
-
-
10
10
-
-
-
-
-
(Note 9)
60
60
60
60
-
-
-
0.8
-
UNITS
ns
ns
ns
ns
ns
ns
ns
μs
ns
NOTES:
9. Parameters with MIN and/or MAX limits are 100% tested at +25°C, unless otherwise specified. Temperature limits are established by
characterization and are not production tested.
10. Dead-Time is defined as the period of time between the LO falling and HO rising or between HO falling and LO rising when the LI and HI inputs
transition simultaneously.
Timing Diagram
LI
LO
90%
HO 10%
t DT
t DT
90%
10%
HI
t R
t PL
t PH
t F
t R AND t F FOR LO ARE NOT
SHOWN FOR CLARITY
EN
7
FN7670.0
December 23, 2011
相关PDF资料 |
PDF描述 |
|---|---|
| F931D226MCC | CAP TANT 22UF 20V 20% 2312 |
| A7VWB-1506M | CABLE D-SUB-AMU15B/AE15M/AFU15B |
| HIP2122FRTAZ-T | IC INTERFACE |
| GSM08DRMI | CONN EDGECARD 16POS .156 SQ WW |
| F931V106MCC | CAP TANT 10UF 35V 20% 2312 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| HIP2123 | 制造商:INTERSIL 制造商全称:Intersil Corporation 功能描述:100V, 2A Peak, High Frequency Half-Bridge Drivers with Rising Edge Delay Timer |
| HIP2123FRTAZ | 功能描述:功率驱动器IC 100V 2A PEAK HALF BRDG DRV W/DELAY TMR RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| HIP2123FRTAZ-T | 功能描述:功率驱动器IC 100V 2A PEAK HALF BRDG DRV W/DELAY TMR RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| HIP2123FRTBZ | 功能描述:功率驱动器IC 100V 2A PEAK HALF BRDG DRV W/DELAY TMR RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| HIP2123FRTBZ-T | 功能描述:功率驱动器IC 100V 2A PEAK HALF BRDG DRV W/DELAY TMR RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。