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参数资料
| 型号： | HIP6602BCR-T |
| 厂商： | Intersil |
| 文件页数： | 11/12页 |
| 文件大小： | 0K |
| 描述： | IC DRVR MOSF 2CH SYC BUCK 16-QFN |
| 标准包装： | 6,000 |
| 配置： | 高端和低端，同步 |
| 输入类型： | PWM |
| 电流 - 峰： | 400mA |
| 配置数： | 2 |
| 输出数： | 4 |
| 高端电压 - 最大（自引导启动）： | 15V |
| 电源电压： | 10.8 V ~ 13.2 V |
| 工作温度： | 0°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 16-VQFN 裸露焊盘 |
| 供应商设备封装： | 16-QFN-EP（5x5） |
| 包装： | 带卷 (TR) |
HIP6602B
Quad Flat No-Lead Plastic Package (QFN)
Micro Lead Frame Plastic Package (MLFP)
L16.5x5
16 LEAD QUAD FLAT NO-LEAD PLASTIC PACKAGE
(COMPLIANT TO JEDEC MO-220VHHB ISSUE C)
MILLIMETERS
SYMBOL
A
A1
A2
A3
b
D
D1
D2
E
E1
E2
e
k
L
L1
N
Nd
Ne
P
θ
MIN
0.80
-
-
0.28
2.55
2.55
0.25
0.35
-
4
-
-
NOMINAL
0.90
-
-
0.20 REF
0.33
5.00 BSC
4.75 BSC
2.70
5.00 BSC
4.75 BSC
2.70
0.80 BSC
-
0.60
-
16
4
4
-
-
MAX
1.00
0.05
1.00
0.40
2.85
2.85
-
0.75
0.15
0.60
12
NOTES
-
-
9
9
5, 8
-
9
7, 8
-
9
7, 8
-
-
8
10
2
3
3
9
9
Rev. 2 10/02
NOTES:
1. Dimensioning and tolerancing conform to ASME Y14.5-1994.
2. N is the number of terminals.
3. Nd and Ne refer to the number of terminals on each D and E.
4. All dimensions are in millimeters. Angles are in degrees.
5. Dimension b applies to the metallized terminal and is measured
between 0.15mm and 0.30mm from the terminal tip.
6. The configuration of the pin #1 identifier is optional, but must be
located within the zone indicated. The pin #1 identifier may be
either a mold or mark feature.
7. Dimensions D2 and E2 are for the exposed pads which provide
improved electrical and thermal performance.
8. Nominal dimensions are provided to assist with PCB Land Pattern
Design efforts, see Intersil Technical Brief TB389.
9. Features and dimensions A2, A3, D1, E1, P & θ are present when
Anvil singulation method is used and not present for saw
singulation.
10. Depending on the method of lead termination at the edge of the
package, a maximum 0.15mm pull back (L1) maybe present. L
minus L1 to be equal to or greater than 0.3mm.
11
FN9076.5
July 22, 2005
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相关代理商/技术参数 |
参数描述 |
|---|---|
| HIP6602BCRZ | 功能描述:功率驱动器IC DL CH SYNCHCT BUCK MOSF DRVR RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| HIP6602BCRZA | 功能描述:功率驱动器IC W/ANNEAL DL CH SYNCH CT BUCK MOSF DRVR RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| HIP6602BCRZA-T | 功能描述:功率驱动器IC W/ANL DL CH SYNCHCT BUCK MOSF DRVR RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| HIP6602BCRZ-T | 功能描述:功率驱动器IC DL CH SYNCHCT BUCK MOSF DRVR RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| HIP6602CB | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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