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| 型号： | HIP6602BCR-T |
| 厂商： | Intersil |
| 文件页数： | 12/12页 |
| 文件大小： | 0K |
| 描述： | IC DRVR MOSF 2CH SYC BUCK 16-QFN |
| 标准包装： | 6,000 |
| 配置： | 高端和低端，同步 |
| 输入类型： | PWM |
| 电流 - 峰： | 400mA |
| 配置数： | 2 |
| 输出数： | 4 |
| 高端电压 - 最大（自引导启动）： | 15V |
| 电源电压： | 10.8 V ~ 13.2 V |
| 工作温度： | 0°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 16-VQFN 裸露焊盘 |
| 供应商设备封装： | 16-QFN-EP（5x5） |
| 包装： | 带卷 (TR) |
HIP6602B
Small Outline Plastic Packages (SOIC)
N
M14.15 (JEDEC MS-012-AB ISSUE C)
INDEX
AREA
E
H
0.25(0.010) M
B M
14 LEAD NARROW BODY SMALL OUTLINE PLASTIC
PACKAGE
INCHES
MILLIMETERS
-B-
SYMBOL
MIN
MAX
MIN
MAX
NOTES
1
2
3
L
A
A1
0.0532
0.0040
0.0688
0.0098
1.35
0.10
1.75
0.25
-
-
SEATING PLANE
B
0.013
0.020
0.33
0.51
9
-A-
D
A
h x 45 o
C
0.0075
0.0098
0.19
0.25
-
D
0.3367
0.3444
8.55
8.75
3
e
B
-C-
A1
α
0.10(0.004)
C
E
e
H
h
0.1497 0.1574
0.050 BSC
0.2284 0.2440
0.0099
0.0196
3.80 4.00
1.27 BSC
5.80 6.20
0.25
0.50
4
-
-
5
0.25(0.010) M
C A M
B S
L
0.016
0.050
0.40
1.27
6
NOTES:
1. Symbols are defined in the “MO Series Symbol List” in Section 2.2 of
N
α
0 o
14
8 o
0 o
14
8 o
7
-
Publication Number 95.
Rev. 0 12/93
2. Dimensioning and tolerancing per ANSI Y14.5M - 1982.
3. Dimension “D” does not include mold flash, protrusions or gate burrs.
Mold flash, protrusion and gate burrs shall not exceed 0.15mm (0.006
inch) per side.
4. Dimension “E” does not include interlead flash or protrusions. Interlead
flash and protrusions shall not exceed 0.25mm (0.010 inch) per side.
5. The chamfer on the body is optional. If it is not present, a visual index
feature must be located within the crosshatched area.
6. “L” is the length of terminal for soldering to a substrate.
7. “N” is the number of terminal positions.
8. Terminal numbers are shown for reference only.
9. The lead width “B”, as measured 0.36mm (0.014 inch) or greater
above the seating plane, shall not exceed a maximum value of
0.61mm (0.024 inch).
10. Controlling dimension: MILLIMETER. Converted inch dimensions
are not necessarily exact.
All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems.
Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see www.intersil.com
12
FN9076.5
July 22, 2005
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| HIP6602BCRZ | 功能描述:功率驱动器IC DL CH SYNCHCT BUCK MOSF DRVR RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| HIP6602BCRZA | 功能描述:功率驱动器IC W/ANNEAL DL CH SYNCH CT BUCK MOSF DRVR RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| HIP6602BCRZA-T | 功能描述:功率驱动器IC W/ANL DL CH SYNCHCT BUCK MOSF DRVR RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| HIP6602BCRZ-T | 功能描述:功率驱动器IC DL CH SYNCHCT BUCK MOSF DRVR RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| HIP6602CB | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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