参数资料
型号: HMBT8050
厂商: HSMC CORP.
英文描述: NPN EPITAXIAL TRANSISTOR
中文描述: npn型外延晶体管
文件页数: 2/3页
文件大小: 30K
代理商: HMBT8050
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6812
Issued Date : 1992.08.25
Revised Date : 2002.10.25
Page No. : 2/3
HMBT8050
HSMC Product Specification
Characteristics Curve
Current Gain & Collector Current
10
100
1000
0.1
1
10
100
1000
10000
Collector Current (mA)
h
V
CE
=1V
Saturation Voltage & Collector Current
10
100
1000
10000
0.1
1
10
100
1000
10000
Collector Current (mA)
S
V
BE(sat)
@ I
C
=10I
B
V
CE(sat)
@ I
C
=100I
B
V
CE(sat)
@ I
C
=10I
B
On Voltage & Collector Current
100
1000
10000
10
100
Collector Current (mA)
1000
10000
O
V
BE(on)
@ V
CE
=1V
Cutoff Frequency & Collector Current
10
100
1000
1
10
Collector Current (mA)
100
1000
C
V
CE
=10V
Capacitance & Reverse-Biased Voltage
1
10
100
0.1
1
10
100
1000
Reverse-Biased Voltage (V)
C
Cob
Safe Operating Area
1
10
100
1000
10000
1
10
100
Forward Voltage (V)
C
PT=1ms
PT=100ms
PT=1s
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