参数资料
型号: HMC-ALH444
厂商: HITTITE MICROWAVE CORP
元件分类: 放大器
英文描述: 1000 MHz - 12000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
封装: 2.64 X 1.64 MM, 0.10 MM HEIGHT, DIE-5
文件页数: 3/6页
文件大小: 191K
代理商: HMC-ALH444
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For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC-ALH444
v03.0410
GaAs HEMT MMIC LOW NOISE
AMPLIFIER, 1 - 12 GHz
Outline Drawing
Absolute Maximum Ratings
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM].
2. TYPICAL BOND PAD IS .004” SQUARE.
3. BACKSIDE METALLIZATION: GOLD.
4. BACKSIDE METAL IS GROUND.
5. BOND PAD METALLIZATION: GOLD.
6. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
7. OVERALL DIE SIZE ±.002”
Drain Bias Voltage
+5.5 Vdc
RF Input Power
12 dBm
Gate Bias Voltage Vgg1
-1 to 0.3 Vdc
Gate Bias Voltage Vgg2
0 to 2.5 Vdc
Thermal Resistance
(channel to die bottom)
109 °C/W
Channel Temperature
180 °C
Storage Temperature
-65 to +150 °C
Operating Temperature
-55 to +85 °C
Die Packaging Information [1]
Standard
Alternate
GP-1 (Gel Pack)
[2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
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相关代理商/技术参数
参数描述
HMC-ALH444_10 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs HEMT MMIC LOW NOISE AMPLIFIER, 1 - 12 GHz
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HMC-ALH445 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs HEMT MMIC LOW NOISE AMPLIFIER, 18 - 40 GHz
HMC-ALH445_10 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs HEMT MMIC LOW NOISE AMPLIFIER, 18 - 40 GHz
HMC-ALH459 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs HEMT LOW NOISE AMPLIFIER, 71 - 86 GHz