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参数资料
| 型号： | HMC-ALH444 |
| 厂商： | HITTITE MICROWAVE CORP |
| 元件分类： | 放大器 |
| 英文描述： | 1000 MHz - 12000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封装： | 2.64 X 1.64 MM, 0.10 MM HEIGHT, DIE-5 |
| 文件页数： | 5/6页 |
| 文件大小： | 191K |
| 代理商： | HMC-ALH444 |
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For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
Note 1: Bypass caps should be 100 pF (approximately) ceramic (single-layer) placed no farther than 30 mils from the amplifier.
Note 2: Best performance obtained from use of <10 mil (long) by 3 by 0.5mil ribbons on input and output.
Assembly Diagram
HMC-ALH444
v03.0410
GaAs HEMT MMIC LOW NOISE
AMPLIFIER, 1 - 12 GHz
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PDF描述 |
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| HMC-ALH459 | 71000 MHz - 86000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| HMC-ALH476 | 14000 MHz - 27000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| HMC-APH196 | 17000 MHz - 30000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| HMC-APH510 | 37000 MHz - 40000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| HMC-AUH232 | 0 MHz - 43000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
相关代理商/技术参数 |
参数描述 |
|---|---|
| HMC-ALH444_10 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs HEMT MMIC LOW NOISE AMPLIFIER, 1 - 12 GHz |
| HMC-ALH444-SX | 功能描述:RF Amplifier IC VSAT, DBS 1GHz ~ 12GHz Die 制造商:analog devices inc. 系列:- 包装:托盘 零件状态:有效 频率:1GHz ~ 12GHz P1dB:19dBm 增益:17dB 噪声系数:1.5dB RF 类型:VSAT，DBS 电压 - 电源:5V 电流 - 电源:55mA 测试频率:1GHz ~ 12GHz 封装/外壳:模具 供应商器件封装:模具 标准包装:2 |
| HMC-ALH445 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs HEMT MMIC LOW NOISE AMPLIFIER, 18 - 40 GHz |
| HMC-ALH445_10 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs HEMT MMIC LOW NOISE AMPLIFIER, 18 - 40 GHz |
| HMC-ALH459 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs HEMT LOW NOISE AMPLIFIER, 71 - 86 GHz |
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