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参数资料
| 型号： | HMC788LP2E |
| 厂商： | HITTITE MICROWAVE CORP |
| 元件分类： | 放大器 |
| 英文描述： | 0 MHz - 10000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封装： | 2 X 2 MM, ROHS COMPLIANT, PLASTIC, SMT, DFN-6 |
| 文件页数： | 3/6页 |
| 文件大小： | 921K |
| 代理商： | HMC788LP2E |
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
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Power Compression @ 10 GHz
P1dB vs. Temperature
Psat vs. Temperature
Output IP3 vs. Temperature [1]
Power Compression @ 1 GHz
Gain & Power vs. Supply Voltage @ 1 GHz
HMC788LP2E
v02.0311
pHEMT GAIN BLOCK
MMIC AMPLIFIER, DC - 10 GHz
5
10
15
20
25
0
2
4
6
8
10
12
+25 C
+85 C
-40 C
P1dB
(dBm)
FREQUENCY (GHz)
0
10
20
30
40
50
60
-10
-5
0
5
10
Pout
Gain
PAE
P
ou
t(
dB
m
),
G
A
IN
(d
B
),
P
A
E
(%
)
INPUT POWER (dBm)
10
15
20
25
30
35
0
2
4
6
8
10
12
+25 C
+85 C
-40 C
IP3
(dBm
)
FREQUENCY (GHz)
5
10
15
20
25
0
2
4
6
8
10
12
+25 C
+85 C
-40 C
Psat
(dBm)
FREQUENCY (GHz)
0
10
20
30
-10
-5
0
5
10
Pout
Gain
PAE
P
ou
t(
dB
m
),
G
A
IN
(d
B
),
P
A
E
(%
)
INPUT POWER (dBm)
10
20
30
40
4.5
5
5.5
Gain
P1dB
IP3
G
A
IN
(d
B
),
P
1d
B
(d
B
m
),
IP
3
(d
B
m
)
SUPPLY VOLTAGE (V)
[1] +5 dBm / Tone output power
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| HMC788LP2ETR | 制造商:Hittite Microwave Corp 功能描述:IC GAIN BLOCK AMP 6DFN 制造商:Hittite Microwave Corp 功能描述:HMC788 Series DC - 10 GHz pHEMT Gain Block Amplifier SMT - DFN-6 |
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