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参数资料
| 型号： | HMC788LP2E |
| 厂商： | HITTITE MICROWAVE CORP |
| 元件分类： | 放大器 |
| 英文描述： | 0 MHz - 10000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封装： | 2 X 2 MM, ROHS COMPLIANT, PLASTIC, SMT, DFN-6 |
| 文件页数： | 4/6页 |
| 文件大小： | 921K |
| 代理商： | HMC788LP2E |
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
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8 - 4
Outline Drawing
Absolute Maximum Ratings
Typical Supply Current
collector Bias voltage (vcc)
+7v
rf input power (rfin)(vs = +5v)
+15 dBm
Junction Temperature
150 °c
continuous pdiss (T = 85 °c)
(derate 10.4 mW/°c above 85 °c)
0.68 W
Thermal resistance
(junction to ground paddle)
96 °c/W
storage Temperature
-65 to +150 °c
operating Temperature
-40 to +85 °c
esD sensitivity (HBm)
class 1A
Vcc (V)
Icq (mA)
4.5
64
5.0
76
5.5
88
noTes:
1. leADfrAme mATeriAl: copper AlloY
2. Dimensions Are in incHes [millimeTers]
3. leAD spAcinG TolerAnce is non-cUmUlATive
4. pAD BUrr lenGTH sHAll Be 0.15mm mAXimUm.
pAD BUrr HeiGHT sHAll Be 0.05mm mAXimUm.
5. pAckAGe WArp sHAll noT eXceeD 0.05mm.
6. All GroUnD leADs AnD GroUnD pADDle mUsT Be
solDereD To pcB rf GroUnD.
7. refer To HiTTiTe ApplicATion noTe for sUGGesTeD
lAnD pATTern.
part number
package Body material
lead finish
msl rating
package marking [1]
Hmc788lp2e
roHs-compliant low stress injection molded plastic
100% matte sn
msl1
[2]
788
XXXX
[1] 4-Digit lot number XXXX
[2] max peak reflow temperature of 260 °c
Package Information
elecTrosTATic sensiTive Device
oBserve HAnDlinG precAUTions
HMC788LP2E
v02.0311
pHEMT GAIN BLOCK
MMIC AMPLIFIER, DC - 10 GHz
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