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参数资料
| 型号： | HMC999 |
| 厂商： | HITTITE MICROWAVE CORP |
| 元件分类： | 放大器 |
| 英文描述： | 10 MHz - 10000 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER |
| 封装： | 3.66 X 1.91 MM, 0.10 MM HEIGHT, ROHS COMPLIANT, DIE-8 |
| 文件页数： | 2/10页 |
| 文件大小： | 612K |
| 代理商： | HMC999 |
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
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HMC999
v00.0611
GaN MMIC 10 WATT POWER AMPLIFIER,
0.01 - 10 GHz
Mounting & Bonding Techniques for Millimeterwave GaN MMICs
The die should be attached directly to the ground plane eutectically or with
conductive epoxy (see hmC general handling, mounting, Bonding note).
50 ohm microstrip transmission lines on 0.127mm (5 mil) thick alumina
thin film substrates are recommended for bringing rf to and from the chip
(figure 1). if 0.254mm (10 mil) thick alumina thin film substrates must be
used, the die should be raised 0.150mm (6 mils) so that the surface of the
die is coplanar with the surface of the substrate. one way to accomplish
this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick
copper tungsten heat spreader which is then attached to the thermally
conductive ground plane (figure 2).
microstrip substrates should be placed as close to the die as possible in
order to minimize bond wire length. Typical die-to-substrate spacing is
0.076mm to 0.152 mm (3 to 6 mils).
Handling Precautions
Follow these precautions to avoid permanent damage.
Storage: All bare die are placed in either waffle or Gel based esD protec-
tive containers, and then sealed in an esD protective bag for shipment.
once the sealed esD protective bag has been opened, all die should be
stored in a dry nitrogen environment.
Cleanliness: handle the chips in a clean environment. Do noT attempt
to clean the chip using liquid cleaning systems.
Static Sensitivity: follow esD precautions to protect against esD
strikes.
Transients: suppress instrument and bias supply transients while bias is
applied. Use shielded signal and bias cables to minimize inductive pick-
up.
General Handling: handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The
surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers.
Mounting
The chip is back-metallized and can be die mounted with Ausn eutectic preforms or with electrically conductive epoxy.
The mounting surface should be clean and flat.
eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool
temperature of 265 °C. when hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. Do
noT expose the chip to a temperature greater than 320 °C for more than 20 seconds. no more than 3 seconds of
scrubbing should be required for attachment.
epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed
around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
rf bonds made with two 1 mil wires are recommended. These bonds should be thermosonically bonded with a force
of 40-60 grams. DC bonds of 0.001” (0.025 mm) diameter, thermosonically bonded, are recommended. Ball bonds
should be made with a force of 40-50 grams and wedge bonds at 18-22 grams. All bonds should be made with a
nominal stage temperature of 150 °C. A minimum amount of ultrasonic energy should be applied to achieve reliable
bonds. All bonds should be as short as possible, less than 12 mils (0.31 mm).
0.102mm (0.004”) Thick GaN MMIC
Wire Bond
RF Ground Plane
0.127mm (0.005”) Thick Alumina
Thin Film Substrate
0.076mm
(0.003”)
Figure 1.
0.102mm (0.004”) Thick GaN MMIC
Wire Bond
RF Ground Plane
0.254mm (0.010”) Thick Alumina
Thin Film Substrate
0.076mm
(0.003”)
Figure 2.
0.150mm (0.005”) Thick
Copper Tungsten
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