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参数资料
| 型号： | HMC999 |
| 厂商： | HITTITE MICROWAVE CORP |
| 元件分类： | 放大器 |
| 英文描述： | 10 MHz - 10000 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER |
| 封装： | 3.66 X 1.91 MM, 0.10 MM HEIGHT, ROHS COMPLIANT, DIE-8 |
| 文件页数： | 9/10页 |
| 文件大小： | 612K |
| 代理商： | HMC999 |
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
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HMC999
v00.0611
GaN MMIC 10 WATT POWER AMPLIFIER,
0.01 - 10 GHz
pad number
function
Description
interface schematic
1
rfin
This pad is DC coupled and matched to 50 ohms.
external blocking capacitor is required
2, 6
VGG2
Gate control 2 for amplifier. Attach bypass capacitor
per application circuit herein. for nomiinal operation
+22V should be applied to either pad 2 or pad 6.
3, 4
AGC1, AGC2
low frequency termination. Attach bypass capacitor
per application circuit herein.
6
rfoUT &
VDD
rf output for amplifier. Connect DC bias (Vdd)
network to provide drain current idd). see application
circuit herein.
7, 8
VGG1
Gate control 1 for amplifier. Attach bypass capacitor
per application circuit herein. please follow “mmiC
Amplifier Biasing procedure” application note. This
voltage may be applied to either pad.
Die Bottom
GnD
Die bottom must be connected to rf/DC ground
Pad Descriptions
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