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参数资料
| 型号： | HMC999 |
| 厂商： | HITTITE MICROWAVE CORP |
| 元件分类： | 放大器 |
| 英文描述： | 10 MHz - 10000 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER |
| 封装： | 3.66 X 1.91 MM, 0.10 MM HEIGHT, ROHS COMPLIANT, DIE-8 |
| 文件页数： | 7/10页 |
| 文件大小： | 612K |
| 代理商： | HMC999 |
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
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HMC999
v00.0611
GaN MMIC 10 WATT POWER AMPLIFIER,
0.01 - 10 GHz
Second Harmonics vs. Idd @
Pout = +26 dBm, Vdd = 48V
Second Harmonics vs. Vdd @
Pout = +26 dBm, Idd = 1100 mA
Second Harmonics vs. Pout
Vdd = 48V & Vgg = 22V & Idd = 1100 mA
Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
56V
Gate Bias Voltage (Vgg1)
-5 to 0V
Gate Bias Voltage (Vgg2)
6V to (Vdd - 8V)
rf input power @ fin < 0.2Ghz (rfin) 28 dBm
rf input power @ fin > 0.2Ghz (rfin) 36 dBm
Channel Temperature
225 °C
Continuous pdiss (T= 85 °C)
(derate 729 mw/°C above 85 °C)
102 w
Thermal resistance [1]
1.37 °C/w
output power into Vswr > 7:1
40 dBm
storage Temperature
-65 to 150 °C
operating Temperature
-55 to 85 °C
eleCTrosTATiC sensiTiVe DeViCe
oBserVe hAnDlinG preCAUTions
Vdd (V)
idd (mA)
28
1100
40
1100
48
1100
Typical Supply Current vs. Vdd
0
10
20
30
40
50
60
70
0
2
4
6
8
10
12
+14 dBm
+18 dBm
+22 dBm
+26 dBm
+30 dBm
S
E
C
O
N
D
H
A
R
M
O
N
IC
(d
B
c)
FREQUENCY(GHz)
Second Harmonics vs. Temperature
Vdd = 48V & Vgg = 22V & Idd = 1100 mA
Pout = 26 dBm
0
10
20
30
40
50
60
70
0
2
4
6
8
10
12
+25C
+85C
S
E
C
O
N
D
H
A
R
M
O
N
IC
(d
B
c)
FREQUENCY(GHz)
0
10
20
30
40
50
60
70
0
2
4
6
8
10
12
800mA
900mA
1000mA
1100mA
S
E
C
O
N
D
H
A
R
M
O
N
IC
(d
B
c)
FREQUENCY(GHz)
0
10
20
30
40
50
60
70
0
2
4
6
8
10
12
+48V
+40V
+28V
S
E
C
O
N
D
H
A
R
M
O
N
IC
(d
B
c)
FREQUENCY(GHz)
[1] Includes 0.5 mil thick thermally conductive epoxy layer. Epoxy thermal conductivity = 60 W/mC
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