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参数资料
| 型号： | HMC999 |
| 厂商： | HITTITE MICROWAVE CORP |
| 元件分类： | 放大器 |
| 英文描述： | 10 MHz - 10000 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER |
| 封装： | 3.66 X 1.91 MM, 0.10 MM HEIGHT, ROHS COMPLIANT, DIE-8 |
| 文件页数： | 4/10页 |
| 文件大小： | 612K |
| 代理商： | HMC999 |
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
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HMC999
v00.0611
GaN MMIC 10 WATT POWER AMPLIFIER,
0.01 - 10 GHz
Psat vs. Temperature
P1dB vs. Temperature
P1dB vs. Supply Voltage
25
30
35
40
45
50
0
1
2
3
4
5
6
7
8
9
10
+25C
+85C
P1dB
(dBm)
FREQUENCY (GHz)
25
30
35
40
45
50
0
1
2
3
4
5
6
7
8
9
10
+28V
+40V
+48V
P1dB
(dBm)
FREQUENCY (GHz)
25
30
35
40
45
50
0
1
2
3
4
5
6
7
8
9
10
+25C
+85C
Psat
(dBm)
FREQUENCY (GHz)
Gain & Return Loss @ Vdd = 28V,
Idd = 1000 mA
-30
-20
-10
0
10
20
0
2
4
6
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10
12
14
S21
S11
S22
R
E
S
P
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E
(d
B
)
FREQUENCY (GHz)
Gain vs. Supply Current @ Vdd = 48V
6
8
10
12
14
16
0
1
2
3
4
5
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9
10
500 mA
600 mA
700 mA
800 mA
900 mA
1000 mA
G
A
IN
(d
B
)
FREQUENCY (GHz)
Gain vs. Supply Voltage @ Idd = 1000 mA
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8
10
12
14
16
0
1
2
3
4
5
6
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8
9
10
+48V
+40V
+28V
G
A
IN
(d
B
)
FREQUENCY (GHz)
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|---|---|
| HMC999_12 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaN MMIC 10 WATT POWER AMPLIFIER |
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| HMCAA112G | 制造商:ADAM-TECH 制造商全称:Adam Technologies, Inc. 功能描述:HIGH DENSITY CARD EDGE .050 [1.27] VESA MICRO CHANNEL ARCHITECTURE (MCA) |
| HMCAA120G | 制造商:ADAM-TECH 制造商全称:Adam Technologies, Inc. 功能描述:HIGH DENSITY CARD EDGE .050 [1.27] VESA MICRO CHANNEL ARCHITECTURE (MCA) |
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