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参数资料
| 型号： | HMC999 |
| 厂商： | HITTITE MICROWAVE CORP |
| 元件分类： | 放大器 |
| 英文描述： | 10 MHz - 10000 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER |
| 封装： | 3.66 X 1.91 MM, 0.10 MM HEIGHT, ROHS COMPLIANT, DIE-8 |
| 文件页数： | 3/10页 |
| 文件大小： | 612K |
| 代理商： | HMC999 |
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
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HMC999
v00.0611
GaN MMIC 10 WATT POWER AMPLIFIER,
0.01 - 10 GHz
Output Return Loss vs. Temperature @
Vdd = 48V, Idd = 1000 mA
Gain & Return Loss @ Vdd = 48V,
Idd = 1000 mA
Gain vs. Temperature @ Vdd = 48V,
Idd = 1000 mA
Low Frequency Gain & Return Loss @
Vdd = 48V, Idd = 1000 mA
Input Return Loss vs. Temperature @
Vdd =48V, Idd = 1000 mA
-30
-20
-10
0
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0
2
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S21
S11
S22
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(d
B
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FREQUENCY (GHz)
6
8
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0
1
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10
+25C
+85C
G
A
IN
(d
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)
FREQUENCY (GHz)
-30
-25
-20
-15
-10
-5
0
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+25C
+85C
R
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LO
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(d
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FREQUENCY (GHz)
-30
-25
-20
-15
-10
-5
0
1
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9
10
+25C
+85C
R
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LO
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(d
B
)
FREQUENCY (GHz)
-30
-20
-10
0
10
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0.001
0.01
0.1
1
10
S21
S11
S22
R
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(d
B
)
FREQUENCY (GHz)
Gain & Return Loss @ Vdd = 40V,
Idd = 1000 mA
-30
-20
-10
0
10
20
0
2
4
6
8
10
12
14
S21
S11
S22
R
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(d
B
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FREQUENCY (GHz)
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