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参数资料
| 型号： | HMMC-5034 |
| 厂商： | AGILENT TECHNOLOGIES INC |
| 元件分类： | 放大器 |
| 英文描述： | 37000 MHz - 43000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| 封装： | 0.0614 X 0.0401 INCH, DIE |
| 文件页数： | 2/8页 |
| 文件大小： | 210K |
| 代理商： | HMMC-5034 |
2
DC Specifications/Physical Properties[1]
1. Backside operating temperature Tbs = 25°C unless otherwise noted.
Symbol
Parameters/Conditions
Min.
Typ.
Max.
Units
VD1,2
Drain Supply Operating Voltages
2
4.5
5
Volts
ID1
Suggested First Stage Operating Drain Supply Current
(VD1 = 4.5V)
100
165
mA
ID2
Suggested Second Stage Operating Drain Supply Current
(VD2 = 4.5V)
200
285
mA
VG1,2
Gate Supply Operating Voltages
(ID1 100 mA, ID2 200 mA)
-0.8
Volts
VP
Pinch-off Voltage (VD1 =VD2 = 4.5 V, ID1 + ΙD2 ≤ 10 mA)
2.5
1.2
Volts
Vdet
Reference and Output Detector DC Voltage
(VD2 = 4.5 V, No RF Output)
1.4
Volts
g
Detector Voltage Sensitivity (VDD = 4.5 V, Pout = 20 dBm)
0.12
mV/mW
θ
ch-bs
Thermal Resistance[2]
(Channel-to-Backside at Tch = 150°C)
2. Thermal resistance (°C/Watt) at a channel temperature T(°C) can be estimated using the equation:
θ(T) θ
ch-bs × [T(°C)+273] / [150°C+273].
44
°C/Watt
Tch
Channel Temperature[3]
(Tbs 90°C, MTTF > 106 hrs, VD1 = VD2 = 4.5 V, ID1 = 100 mA,
ID2 = 200 mA)
3. Derate MTTF by a factor of two for every 8°C above Tch.
150
°C
Notes:
RF Specifications
(TA = 25°C, Z0 = 50, VD1 = VD2 = 4.5 V, ID1 = 100 mA, ID2 = 200 mA)
Symbol
Parameters/Conditions
37–40 GHz
40–2.5 GHz
Units
Min.
Typ.
Max.
Min.
Typ.
Max.
BW
Operating Bandwidth
37
40
42.5
GHz
Gain
Small Signal Gain
7
8
11
6
7
11
dB
Gain/T
Temperature Coefficient of Gain
0.019
dB/°C
P(-1dB)
Output Power
at 1dB Gain Compression[1]
1. Devices operating continuously at or beyond 1 dB gain compression may experience power degradation.
21
23
20
22
dBm
PSAT
Saturated Output Power[1]
22
24
21
23
dBm
P/T
Temperature Coefficient
of P(-1dB) and Psat
0.015
dB/°C
(RLin)MIN
Minimum Input Return Loss
9
10
8
10
dB
(RLout)MIN
Minimum Output Return Loss
10
12
9
12
dB
Isolation
Minimum Reverse Isolation
30
27
dB
Notes:
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