参数资料
型号: HMMC-5034
厂商: AGILENT TECHNOLOGIES INC
元件分类: 放大器
英文描述: 37000 MHz - 43000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
封装: 0.0614 X 0.0401 INCH, DIE
文件页数: 3/8页
文件大小: 210K
代理商: HMMC-5034
3
crowave/millimeter-wave con-
nections should be kept as short
as possible to minimize induc-
tance. For assemblies requiring
long bond wires, multiple wires
can be attached to the RF bond-
ing pads.
Thermosonic wedge is the pre-
ferred method for wire bonding
to the gold bond pads. A guided-
wedge at an ultrasonic power
level of 64 dB can be used for
the 0.7 mil wire. The recom-
mended wire bond stage tem-
perature is 150
± 2°C.
GaAs MMICs are ESD sensitive.
ESD preventive measures must
be employed in all aspects of
storage, handling, and assem-
bly.
MMIC ESD precautions, han-
dling considerations, die attach
and bonding methods are criti-
cal factors in successful GaAs
MMIC performance and reliabil-
ity.
Agilent application note #54,
"GaAs MMIC ESD, Die Attach
and Bonding Guidelines" pro-
vides basic information on these
subjects.
Applications
The HMMC-5034 MMIC is a
broadband power amplifier de-
signed for use in communica-
tions transmitters that operate
in various frequency bands
within 37 GHz and 42.5 GHz. It
can be attached to the output of
the HMMC-5040 increasing the
power handling capability of
transmitters requiring linear op-
eration.
Biasing and Operation
The recommended DC bias con-
dition is with both drains (VD1
and VD2) connected to single 4.5
volt supply (VDD) and both gates
(VG1 and VG2) connected to an
adjustable negative voltage sup-
ply (VGG) as shown in Figures 12
or 13. The gate voltage is adjust-
ed for a total drain supply cur-
rent of commonly 300 mA or
less.
The RF input and output ports
are AC–coupled.
An output power detector net-
work is also supplied. The
Det.Out port provides a DC volt-
age that is generated by the RF
power at the RF-Output port.
The Det.Ref pad provides a DC
reference voltage that can be
used to nullify the effects of tem-
perature variations on the de-
tected RF voltage. The
differential voltage between the
Det.Ref and Det.Out bonding
pads can be correlated to the RF
power emerging from the RF-
Output port. A bond wire at-
taching both VD2 bond pads to
the supply will assure symmet-
ric operation and minimize any
DC offset voltage between
Det.Ref and Det.Out (at no RF
output power).
No ground wires are needed be-
cause ground connections are
made with plated through-holes
to the backside of the device.
Assembly Techniques
Electrically and thermally con-
ductive epoxy die attach is the
preferred assembly method. Sol-
der die attach using a fluxless
gold-tin (AuSn) solder preform
can also be used. The device
should be attached to an electri-
cally conductive surface to com-
plete the DC and RF ground
paths. The backside metalliza-
tion on the device is gold.
It is recommended that the elec-
trical connections to the bond-
ing pads be made using 0.7-1.0
mil diameter gold wire. The mi-
Figure 1.
Simplified Schematic Diagram
RF Input
RF Output
VD2
VD1
VG1
VG1
Stage 1
Stage 2
Det.Out
R1
Det.Ref
D1
D2
R1
C
VD1
(Optional)
VG2
VG2
(Optional)
VD2
(Optional)
相关PDF资料
PDF描述
HMMC-5034 37000 MHz - 43000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
HMMC-5040 20000 MHz - 40000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
HMMC-5220 0 MHz - 15000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
HMTMS-102-55-G-D-390 4 CONTACT(S), MALE, STRAIGHT BOARD STACKING CONNECTOR, SOLDER
HMTMS-102-55-G-S-390 2 CONTACT(S), MALE, STRAIGHT BOARD STACKING CONNECTOR, SOLDER
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