参数资料
型号: HSMS-2863-TR2
厂商: AGILENT TECHNOLOGIES INC
元件分类: 参考电压二极管
英文描述: SILICON, UHF-C BAND, MIXER DIODE
封装: SOT-23, 3 PIN
文件页数: 13/17页
文件大小: 205K
代理商: HSMS-2863-TR2
5
Typical Parameters, Single Diode
1
10
100
1
10
FORWARD
CURRENT
(
A)
FORWARD
VOLTAGE
DIFFERENCE
(mV)
VOLTAGE
OUT
(mV)
POWER IN (dBm)
0.05
0.15
0.20
0.10
0.25
FORWARD VOLTAGE (V)
Figure 2. Forward Voltage Match.
.01
.1
1
10
100
0.1 0.2 0.3 0.4
0.7
0.6
0.8 0.9
0.5
1.0
FORWARD
CURRENT
(mA)
FORWARD VOLTAGE (V)
Figure 1. Forward Current vs.
Forward Voltage at Temperature.
1
10
100
1000
10,000
–40
–30
–10
0
–20
10
Figure 5. Dynamic Transfer
Characteristic as a Function of DC Bias.
Figure 3. +25
°C Output Voltage vs.
Input Power, 3
A Bias.
Figure 4. +25
°C Expanded Output
Voltage vs. Input Power. See Figure 3.
5
35
30
40
10
15
20
25
.1
1
10
100
OUTPUT
VOLTAGE
(mV)
BIAS CURRENT (
A)
Figure 6. Voltage Sensitivity as a
Function of DC Bias Current.
T
A = –55°C
T
A = +25°C
T
A = +85°C
IF (left scale)
V
F (right scale)
Frequency = 2.45 GHz
Fixed-tuned FR4 circuit
RL = 100 K
20
A
5
A
10
A
Input Power =
–30 dBm @ 2.45 GHz
Data taken in fixed-tuned
FR4 circuit
RL = 100 K
VOLTAGE
OUT
(mV)
-50
0.1
POWER IN (dBm)
-30
-20
10000
10
1
-40
0
100
-10
1000
RL = 100 K
5.8 GHz
DIODES TESTED IN FIXED-TUNED
FR4 MICROSTRIP CIRCUITS.
915 MHz
2.45 GHz
VOLTAGE
OUT
(mV)
-50
0.3
POWER IN (dBm)
-30
10
1
-40
30
RL = 100 K
2.45 GHz
915 MHz
5.8 GHz
DIODES TESTED IN FIXED-TUNED
FR4 MICROSTRIP CIRCUITS.
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