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参数资料
| 型号： | HSMS-2863-TR2 |
| 厂商： | AGILENT TECHNOLOGIES INC |
| 元件分类： | 参考电压二极管 |
| 英文描述： | SILICON, UHF-C BAND, MIXER DIODE |
| 封装： | SOT-23, 3 PIN |
| 文件页数： | 3/17页 |
| 文件大小： | 205K |
| 代理商： | HSMS-2863-TR2 |
11
Six Lead Circuits
The differential detector is often
used to provide temperature
compensation for a Schottky
detector, as shown in Figures 27
and 28.
matching
network
differential
amplifier
bias
Figure 27. Differential Detector.
to differential
amplifier
Vs
detector
diode
reference diode
PA
HSMS-2865
Figure 28. Conventional Differential
Detector.
These circuits depend upon the
use of two diodes having matched
Vf characteristics over all
operating temperatures. This is
best achieved by using two
diodes in a single package, such
as the SOT-143 HSMS-2865 as
shown in Figure 29.
In high power differential detec-
tors, RF coupling from the
detector diode to the reference
diode produces a rectified voltage
in the latter, resulting in errors.
Isolation between the two diodes
can be obtained by using the
HSMS-286K diode with leads 2
and 5 grounded. The difference
between this product and the
conventional HSMS-2865 can be
seen in Figure 29.
HSMS-2865
SOT-143
HSMS-286K
SOT-363
34
65
4
1
12
2
3
Figure 29. Comparing Two Diodes.
The HSMS-286K, with leads 2 and
5 grounded, offers some isolation
from RF coupling between the
diodes. This product is used in a
differential detector as shown in
Figure 30.
to differential
amplifier
Vs
detector
diode
reference diode
PA
HSMS-286K
Figure 30. High Isolation
Differential Detector.
In order to achieve the maximum
isolation, the designer must take
care to minimize the distance
from leads 2 and 5 and their
respective ground via holes.
Tests were run on the HSMS-282K
and the conventional HSMS-2825
pair, which compare with each
other in the same way as the
HSMS-2865 and HSMS-286K, with
the results shown in Figure 31.
-35
-25
-15
-5
15
5
37 dB
47 dB
OUTPUT
VOLTAGE
(mV)
INPUT POWER (dBm)
0.5
1000
100
10
1
5000
Frequency = 900 MHz
HSMS-2825
ref. diode
RF diode
Vout
Square law
response
HSMS-282K
ref. diode
Figure 31. Comparing HSMS-282K
with HSMS-2825.
The line marked “RF diode, Vout”
is the transfer curve for the
detector diode — both the
HSMS-2825 and the HSMS-282K
exhibited the same output
voltage. The data were taken over
the 50 dB dynamic range shown.
To the right is the output voltage
(transfer) curve for the reference
diode of the HSMS-2825, showing
37 dB of isolation. To the right of
that is the output voltage due to
RF leakage for the reference
diode of the HSMS-282K, demon-
strating 10 dB higher isolation
than the conventional part.
Such differential detector circuits
generally use single diode
detectors, either series or shunt
mounted diodes. The voltage
doubler offers the advantage of
twice the output voltage for a
given input power. The two
concepts can be combined into
the differential voltage doubler,
as shown in Figure 32.
matching
network
bias
differential
amplifier
Figure 32. Differential Voltage
Doubler, HSMS-286P.
Here, all four diodes of the
HSMS-286P are matched in their
Vf characteristics, because they
came from adjacent sites on the
wafer. A similar circuit can be
realized using the HSMS-286R
ring quad.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| HSMS-2863-TR2G | 功能描述:射频检测器 4 VBR 0.3 pF RoHS:否 制造商:Skyworks Solutions, Inc. 配置: 频率范围:650 MHz to 3 GHz 最大二极管电容: 最大工作温度:+ 85 C 最小工作温度:- 40 C 封装 / 箱体:SC-88 封装:Reel |
| HSMS-2864 | 制造商:AGILENT 制造商全称:AGILENT 功能描述:Surface Mount Microwave Schottky Detector Diodes |
| HSMS-2864-BLKG | 功能描述:射频检测器 4 VBR 0.3 pF RoHS:否 制造商:Skyworks Solutions, Inc. 配置: 频率范围:650 MHz to 3 GHz 最大二极管电容: 最大工作温度:+ 85 C 最小工作温度:- 40 C 封装 / 箱体:SC-88 封装:Reel |
| HSMS-2864-TR1G | 功能描述:射频检测器 4 VBR 0.3 pF RoHS:否 制造商:Skyworks Solutions, Inc. 配置: 频率范围:650 MHz to 3 GHz 最大二极管电容: 最大工作温度:+ 85 C 最小工作温度:- 40 C 封装 / 箱体:SC-88 封装:Reel |
| HSMS-2864-TR2G | 功能描述:射频检测器 4 VBR 0.3 pF RoHS:否 制造商:Skyworks Solutions, Inc. 配置: 频率范围:650 MHz to 3 GHz 最大二极管电容: 最大工作温度:+ 85 C 最小工作温度:- 40 C 封装 / 箱体:SC-88 封装:Reel |
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