参数资料
型号: HSMS-2863-TR2
厂商: AGILENT TECHNOLOGIES INC
元件分类: 参考电压二极管
英文描述: SILICON, UHF-C BAND, MIXER DIODE
封装: SOT-23, 3 PIN
文件页数: 2/17页
文件大小: 205K
代理商: HSMS-2863-TR2
10
Input return loss, shown in
Figure 23, exhibits wideband
match.
RETURN
LOSS
(dB)
5.6
-20
FREQUENCY (GHz)
5.8
0
-10
-15
6.0
-5
5.9
5.7
Figure 23. Input Return Loss.
Voltage Doublers
To this point, we have restricted
our discussion to single diode
detectors. A glance at Figure 9,
however, will lead to the
suggestion that the two types of
single diode detectors be
combined into a two diode
voltage doubler[4] (known also as
a full wave rectifier). Such a
detector is shown in Figure 24.
VIDEO OUT
Z-MATCH
NETWORK
RF IN
Figure 24. Voltage Doubler Circuit.
Such a circuit offers several
advantages. First the voltage
outputs of two diodes are added
in series, increasing the overall
value of voltage sensitivity for the
network (compared to a single
diode detector). Second, the RF
impedances of the two diodes are
added in parallel, making the job
of reactive matching a bit easier.
Such a circuit can easily be
realized using the two series
diodes in the HSMS-286C.
The “Virtual Battery”
The voltage doubler can be used
as a virtual battery, to provide
power for the operation of an I.C.
or a transistor oscillator in a tag.
Illuminated by the CW signal from
a reader or interrogator, the
Schottky circuit will produce
power sufficient to operate an I.C.
or to charge up a capacitor for a
burst transmission from an
oscillator. Where such virtual
batteries are employed, the bulk,
cost, and limited lifetime of a
battery are eliminated.
Temperature Compensation
The compression of the detector’s
transfer curve is beyond the
scope of this data sheet, but some
general comments can be made.
As was given earlier, the diode’s
video resistance is given by
8.33 x 10-5 nT
RV =
IS + Ib
where T is the diode’s tempera-
ture in
°K.
As can be seen, temperature has a
strong effect upon RV, and this
will in turn affect video band-
width and input RF impedance.
A glance at Figure 6 suggests that
the proper choice of bias current
in the HSMS-286x series can
minimize variation over
temperature.
The detector circuits described
earlier were tested over tempera-
ture. The 915 MHz voltage
doubler using the HSMS-286C
series produced the output
voltages as shown in Figure 25.
The use of 3
A of bias resulted in
the highest voltage sensitivity, but
at the cost of a wide variation
over temperature. Dropping the
bias to 1
A produced a detector
with much less temperature
variation.
A similar experiment was con-
ducted with the HSMS-286B
series in the 5.8 GHz detector.
Once again, reducing the bias to
some level under 3
A stabilized
the output of the detector over a
wide temperature range.
It should be noted that curves
such as those given in Figures 25
and 26 are highly dependent upon
the exact design of the input
impedance matching network.
The designer will have to experi-
ment with bias current using his
specific design.
-55
-35
-15
5
85
45
65
OUTPUT
VOLTAGE
(mV)
TEMPERATURE (
°C)
25
40
80
60
120
100
INPUT POWER = –30 dBm
3.0
A
1.0
A
10
A
0.5
A
Figure 25. Output Voltage vs.
Temperature and Bias Current in the
915 MHz Voltage Doubler using the
HSMS-286C.
OUTPUT
VOLTAGE
(mV)
TEMPERATURE (
°C)
5
15
35
25
INPUT POWER = – 30 dBm
3.0
A
10
A
1.0
A
0.5
A
-55
-35
-15
5
85
45
65
25
Figure 26. Output Voltage vs.
Temperature and Bias Current in the
5.80 GHz Voltage Detector using the
HSMS-286B Schottky.
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