HI-SINCERITY
MICROELECTRONICS CORP.
HTIP107
PNP EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HE6735
Issued Date : 1994.08.10
Revised Date : 2002.01.18
Page No. : 1/4
HTIP107
HSMC Product Specification
Description
The HTIP107 is designed for use in general purpose amplifier and low-
speed switching applications.
Absolute Maximum Ratings
(Ta=25
°
C)
Maximum Temperatures
Storage Temperature........................................................................................................ -55 ~ +150
°
C
Junction Temperature ................................................................................................ +150
°
C Maximum
Maximum Power Dissipation
Total Power Dissipation (Tc=25
°
C)................................................................................................. 80 W
Total Power Dissipation (Ta=25
°
C)................................................................................................... 2 W
Maximum Voltages and Currents
BVCBO Collector to Base Voltage ............................................................................................... -100 V
BVCEO Collector to Emitter Voltage............................................................................................ -100 V
BVEBO Emitter to Base Voltage...................................................................................................... -5 V
IC Collector Current......................................................................................................................... -8 A
Characteristics
(Ta=25
°
C)
Symbol
BVCBO
BVCEO
ICBO
ICEO
IEBO
*VCE(sat)1
*VCE(sat)2
*VBE(on)
*hFE1
*hFE2
Cob
Min.
-100
-100
-
-
-
-
-
-
1
200
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-50
-50
-8
-2
-2.5
-2.8
20
-
300
Unit
V
V
uA
uA
mA
V
V
V
K
Test Conditions
IC=-1mA, IE=0
IC=-30mA, IB=0
VCB=-100V, IE=0
VCE=-50V, IB=0
VEB=-5V, IC=0
IC=-3A, IB=-6mA
IC=-8A, IB=-80mA
IC=-8A, VCE=-4V
IC=-3A, VCE=-4V
IC=-8A, VCE=-4V
VCB=-10V, f=0.1MHz
*Pulse Test: Pulse Width
≤
380us, Duty Cycle
≤
2%
pF
Darlington Schematic
R2
R1
C
E
B
TO-220