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参数资料
| 型号： | HTIP112 |
| 厂商： | HSMC CORP. |
| 英文描述： | NPN EPITAXIAL PLANAR TRANSISTOR |
| 中文描述： | 瑞展晶体管 |
| 文件页数： | 1/4页 |
| 文件大小： | 44K |
| 代理商： | HTIP112 |
HI-SINCERITY
MICROELECTRONICS CORP.
HTIP112
NPN EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HE200203
Issued Date : 2000.08.01
Revised Date : 2002.03.28
Page No. : 1/4
HTIP112
HSMC Product Specification
Description
The HTIP112 is designed for use in general purpose amplifier and low-
speed switching applications.
Absolute Maximum Ratings
(Ta=25
°
C)
Maximum Temperatures
Storage Temperature........................................................................................................ -55 ~ +150
°
C
Junction Temperature ................................................................................................ +150
°
C Maximum
Maximum Power Dissipation
Total Power Dissipation (Tc=25
°
C)................................................................................................. 50 W
Total Power Dissipation (Ta=25
°
C)................................................................................................... 2 W
Maximum Voltages and Currents
BVCBO Collector to Base Voltage................................................................................................. 100 V
BVCEO Collector to Emitter Voltage.............................................................................................. 100 V
BVEBO Emitter to Base Voltage....................................................................................................... 5 V
IC Collector Current (Continue) ......................................................................................................... 4 A
IC Collector Current (Peak)................................................................................................................ 6 A
Characteristics
(Ta=25
°
C)
Symbol
BVCBO
BVCEO
ICBO
ICEO
IEBO
*VCE(sat)
*VBE(on)
*hFE1
*hFE2
Cob
Min.
100
100
-
-
-
-
-
1
500
-
Typ.
-
-
-
-
-
-
-
-
-
-
Max.
-
-
1
2
2
2.5
2.8
-
-
200
Unit
V
V
mA
mA
mA
V
V
K
Test Conditions
IC=1mA
IC=30mA
VCB=100V
VCE=50V
VEB=5V
IC=2A, IB=8mA
IC=2A, VCE=4V
IC=1A, VCE=4V
IC=2A, VCE=4V
VCB=10V, f=0.1MHz
*Pulse Test: Pulse Width
≤
380us, Duty Cycle
≤
2%
pF
Darlington Schematic
R2
R1
C
E
B
TO-220
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