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参数资料
| 型号： | HTIP117 |
| 厂商： | HSMC CORP. |
| 英文描述： | PNP EPITAXIAL PLANAR TRANSISTOR |
| 中文描述： | 进步党外延平面晶体管 |
| 文件页数： | 1/3页 |
| 文件大小： | 34K |
| 代理商： | HTIP117 |
HI-SINCERITY
MICROELECTRONICS CORP.
HTIP117
PNP EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HE200204
Issued Date : 2000.08.01
Revised Date : 2002.01.18
Page No. : 1/3
HTIP117
HSMC Product Specification
Description
The HTIP117 is designed for use in general purpose amplifier and low-
speed switching applications.
Absolute Maximum Ratings
(Ta=25
°
C)
Maximum Temperatures
Storage Temperature........................................................................................................ -55 ~ +150
°
C
Junction Temperature ................................................................................................ +150
°
C Maximum
Maximum Power Dissipation
Total Power Dissipation (Tc=25
°
C)................................................................................................. 50 W
Total Power Dissipation (Ta=25
°
C)................................................................................................... 2 W
Maximum Voltages and Currents
BVCBO Collector to Base Voltage ............................................................................................... -100 V
BVCEO Collector to Emitter Voltage............................................................................................ -100 V
BVEBO Emitter to Base Voltage...................................................................................................... -5 V
IC Collector Current (Continue)........................................................................................................ -4 A
IC Collector Current (Peak).............................................................................................................. -6 A
Characteristics
(Ta=25
°
C)
Symbol
BVCBO
BVCEO
ICBO
ICEO
IEBO
*VCE(sat)
*VBE(on)
*hFE1
*hFE2
Cob
Min.
-100
-100
-
-
-
-
-
1
500
-
Typ.
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-1
-2
-2
-2.5
-2.8
-
-
200
Unit
V
V
mA
mA
mA
V
V
K
Test Conditions
IC=-1mA
IC=-30mA
VCB=-100V
VCE=-50V
VEB=-5V
IC=-2A, IB=-8mA
IC=-2A, VCE=-4V
IC=-1A, VCE=-4V
IC=-2A, VCE=-4V
VCB=-10V, f=0.1MHz
*Pulse Test: Pulse Width
≤
380us, Duty Cycle
≤
2%
pF
Darlington Schematic
R2
R1
C
E
B
TO-220
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