参数资料
型号: HTIP117
厂商: HSMC CORP.
英文描述: PNP EPITAXIAL PLANAR TRANSISTOR
中文描述: 进步党外延平面晶体管
文件页数: 2/3页
文件大小: 34K
代理商: HTIP117
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE200204
Issued Date : 2000.08.01
Revised Date : 2002.01.18
Page No. : 2/3
HTIP117
HSMC Product Specification
Characteristics Curve
Switching Time & Collector Current
0.1
1
10
1
10
Collector Current-I
C
(A)
S
V
CC
=30V, I
C
=250I
B1
= -250I
B2
Tstg
Tf
Ton
Capacitance & Revierse-Biased Voltage
10
100
1000
0.1
1
10
100
Reverse-Biased Voltage (V)
C
Cob
Safe Operating Area
1
10
100
1000
10000
C
C
(
100000
1
10
100
Forward Voltage-V
CE
(V)
PT=1ms
PT=100ms
PT=1s
Current Gain & Collector Current
1
10
100
1000
10000
100000
1
10
100
1000
10000
Collector Current I
C
(mA)
h
25
o
C
125
o
C
75
o
C
hFE @ V
CE
=4V
Saturation Voltage & Collcetor Current
100
1000
10000
100
1000
10000
Collector Current I
C
(mA)
S
V
CE(sat)
@ I
C
=250I
B
25
o
C
75
o
C
125
o
C
ON Voltage & Collector Current
100
1000
10000
1
10
100
1000
10000
Collector Current I
C
(mA)
O
25
o
C
125
o
C
75
o
C
V
BE(ON)
@ V
CE
=4V
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