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| 型号： | HUF75852G3 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/10页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 150V 75A TO-247 |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品变化通告： | Lead Frame Change 20/Dec/2007 |
| 标准包装： | 150 |
| 系列： | UltraFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 150V |
| 电流 - 连续漏极(Id) @ 25° C： | 75A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 16 毫欧 @ 75A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 480nC @ 20V |
| 输入电容 (Ciss) @ Vds： | 7690pF @ 25V |
| 功率 - 最大： | 500W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-247-3 |
| 供应商设备封装： | TO-247 |
| 包装： | 管件 |
| 其它名称： | HUF75852G3-ND HUF75852G3FS |
HUF75852G3
Electrical Specifications
T C = 25 o C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
OFF STATE SPECIFICATIONS
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
BV DSS
I DSS
I GSS
I D = 250 μ A, V GS = 0V (Figure 11)
V DS = 140V, V GS = 0V
V DS = 135V, V GS = 0V, T C = 150 o C
V GS = ± 20V
150
-
-
-
-
-
-
-
-
1
250
± 100
V
μ A
μ A
nA
ON STATE SPECIFICATIONS
Gate to Source Threshold Voltage
Drain to Source On Resistance
V GS(TH)
r DS(ON)
V GS = V DS , I D = 250 μ A (Figure 10)
I D = 75A, V GS = 10V (Figure 9)
2
-
-
0.013
4
0.016
V
?
THERMAL SPECIFICATIONS
Thermal Resistance Junction to Case
Thermal Resistance Junction to
R θ JC
R θ JA
TO-247
-
-
-
-
0.30
30
o C/W
o C/W
Ambient
SWITCHING SPECIFICATIONS (V GS = 10V)
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
t ON
t d(ON)
t r
t d(OFF)
t f
t OFF
V DD = 75V, I D = 75A
V GS = 10V,
R GS = 2.0 ?
(Figures 18, 19)
-
-
-
-
-
-
-
22
151
82
107
-
260
-
-
-
-
285
ns
ns
ns
ns
ns
ns
GATE CHARGE SPECIFICATIONS
Total Gate Charge
Gate Charge at 10V
Threshold Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Q g(TOT)
Q g(10)
Q g(TH)
Q gs
Q gd
V GS = 0V to 20V
V GS = 0V to 10V
V GS = 0V to 2V
V DD = 75V,
I D = 75A,
I g(REF) = 1.0mA
(Figures 13, 16, 17)
-
-
-
-
-
400
215
15
25
66
480
260
17.5
-
-
nC
nC
nC
nC
nC
CAPACITANCE SPECIFICATIONS
Input Capacitance
C ISS
V DS = 25V, V GS = 0V,
-
7690
-
pF
f = 1MHz
Output Capacitance
Reverse Transfer Capacitance
C OSS
C RSS
(Figure 12)
-
-
1650
535
-
-
pF
pF
Source to Drain Diode Specifications
PARAMETER
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovered Charge
SYMBOL
V SD
t rr
Q RR
TEST CONDITIONS
I SD = 75A
I SD = 35A
I SD = 75A, dI SD /dt = 100A/ μ s
I SD = 75A, dI SD /dt = 100A/ μ s
MIN
-
-
-
-
TYP
-
-
-
-
MAX
1.25
1.00
260
1830
UNITS
V
V
ns
nC
?2001 Fairchild Semiconductor Corporation
HUF75852G3 Rev. C0
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