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参数资料
| 型号： | HUF75852G3 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 7/10页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 150V 75A TO-247 |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品变化通告： | Lead Frame Change 20/Dec/2007 |
| 标准包装： | 150 |
| 系列： | UltraFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 150V |
| 电流 - 连续漏极(Id) @ 25° C： | 75A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 16 毫欧 @ 75A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 480nC @ 20V |
| 输入电容 (Ciss) @ Vds： | 7690pF @ 25V |
| 功率 - 最大： | 500W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-247-3 |
| 供应商设备封装： | TO-247 |
| 包装： | 管件 |
| 其它名称： | HUF75852G3-ND HUF75852G3FS |
HUF75852G3
PSPICE Electrical Model
.SUBCKT HUF75852 2 1 3 ;
CA 12 8 12.0e-9
CB 15 14 12.0e-9
CIN 6 8 7.15e-9
rev 26 Oct 1999
DBODY 7 5 DBODYMOD
DBREAK 5 11 DBREAKMOD
DPLCAP 10 5 DPLCAPMOD
10
DPLCAP
5
LDRAIN
DRAIN
2
ESLC
EBREAK 11 7 17 18 159.2
EDS 14 8 5 8 1
EGS 13 8 6 8 1
ESG 6 10 6 8 1
EVTHRES 6 21 19 8 1
RSLC2
RSLC1
51
5
51
DBREAK
11
RLDRAIN
9
EVTEMP 20 6 18 22 1
IT 8 17 1
LDRAIN 2 5 1.0e-9
LGATE 1 9 7.46e-9
LSOURCE 3 7 3.87e-9
MMED 16 6 8 8 MMEDMOD
GATE
1
LGATE
RLGATE
-
ESG
+
EVTEMP
RGATE + 18 -
22
20
6
8
6
EVTHRES
+ 19 -
8
50
RDRAIN
16
21
MMED
MSTRO
+
17
EBREAK 18
-
MWEAK
DBODY
MSTRO 16 6 8 8 MSTROMOD
MWEAK 16 21 8 8 MWEAKMOD
CIN
8
7
LSOURCE
SOURCE
3
RBREAK 17 18 RBREAKMOD 1
RDRAIN 50 16 RDRAINMOD 9.50e-3
RSOURCE
RLSOURCE
RGATE 9 20 0.80
RLDRAIN 2 5 10
RLGATE 1 9 74.6
12
S1A
13
8
S2A
14
13
15
17
RBREAK
18
RLSOURCE 3 7 38.7
RSLC1 5 51 RSLCMOD 1e-6
RSLC2 5 50 1e3
RSOURCE 8 7 RSOURCEMOD 2.37e-3
RVTHRES 22 8 RVTHRESMOD 1
RVTEMP 18 19 RVTEMPMOD 1
CA
S1B
13
+
EGS
6
8
S2B
CB
+
EDS
5
8
14
IT
RVTEMP
19
-
VBAT
+
S1A
S1B
S2A
6 12 13 8 S1AMOD
13 12 13 8 S1BMOD
6 15 14 13 S2AMOD
-
-
8
RVTHRES
22
S2B
13 15 14 13 S2BMOD
VBAT 22 19 DC 1
ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*245),2.5))}
.MODEL DBODYMOD D (IS = 6.03e-12 RS = 2.17e-3 TRS1 = 1.97e-3 TRS2 = 1.03e-6 CJO = 7.91e-9 TT = 1.69e-7 M = 0.60)
.MODEL DBREAKMOD D (RS = 3.53e- 1TRS1 = 0TRS2 = 0)
.MODEL DPLCAPMOD D (CJO = 9.52e- 9IS = 1e-3 0N = 1 M = 0.88)
.MODEL MMEDMOD NMOS (VTO = 3.05 KP = 8.50 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 0.80)
.MODEL MSTROMOD NMOS (VTO = 3.53 KP = 215 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u)
.MODEL MWEAKMOD NMOS (VTO = 2.63 KP = 0.075 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 8.0 )
.MODEL RBREAKMOD RES (TC1 = 1.12e- 3TC2 = -1.00e-7)
.MODEL RDRAINMOD RES (TC1 = 1.03e-2 TC2 = 3.04e-5)
.MODEL RSLCMOD RES (TC1 = 2.52e-3 TC2 = 0)
.MODEL RSOURCEMOD RES (TC1 = 1.01e-3 TC2 = 0)
.MODEL RVTHRESMOD RES (TC1 = -3.65e-3 TC2 = -1.55e-5)
.MODEL RVTEMPMOD RES (TC1 = -2.85e- 3TC2 = 0)
.MODEL S1AMOD VSWITCH (RON = 1e-5
.MODEL S1BMOD VSWITCH (RON = 1e-5
.MODEL S2AMOD VSWITCH (RON = 1e-5
.MODEL S2BMOD VSWITCH (RON = 1e-5
ROFF = 0.1
ROFF = 0.1
ROFF = 0.1
ROFF = 0.1
VON = -3.5
VON = -3.0
VON = -2.5
VON = -0.5
VOFF= -3.0)
VOFF= -3.5)
VOFF= -0.5)
VOFF= -2.5)
.ENDS
NOTE: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options ; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank Wheatley.
?2001 Fairchild Semiconductor Corporation
HUF75852G3 Rev. C0
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