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| 型号： | HUF75852G3 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 4/10页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 150V 75A TO-247 |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品变化通告： | Lead Frame Change 20/Dec/2007 |
| 标准包装： | 150 |
| 系列： | UltraFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 150V |
| 电流 - 连续漏极(Id) @ 25° C： | 75A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 16 毫欧 @ 75A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 480nC @ 20V |
| 输入电容 (Ciss) @ Vds： | 7690pF @ 25V |
| 功率 - 最大： | 500W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-247-3 |
| 供应商设备封装： | TO-247 |
| 包装： | 管件 |
| 其它名称： | HUF75852G3-ND HUF75852G3FS |
HUF75852G3
Typical Performance Curves
(Continued)
1000
1000
If R = 0
t AV = (L)(I AS )/(1.3*RATED BV DSS - V DD )
If R ≠ 0
t AV = (L/R)ln[(I AS *R)/(1.3*RATED BV DSS - V DD ) +1]
100
100 μ s
100
STARTING T J = 25 o C
10
OPERATION IN THIS
AREA MAY BE
LIMITED BY r DS(ON)
SINGLE PULSE
1ms
10ms
STARTING T J = 150 o C
1
T J = MAX RATED
T C = 25 o C
10
0.01
0.1
1
10
1
10
100
500
t AV , TIME IN AVALANCHE (ms)
V DS , DRAIN TO SOURCE VOLTAGE (V)
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
NOTE: Refer to Fairchild Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY
200
150
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
V DD = 15V
200
150
V GS = 20V
V GS = 10V
V GS = 7V
V GS = 6V
V GS =5V
100
100
50
0
T J = 175 o C
T J = 25 o C
T J = -55 o C
50
0
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
T C = 25 o C
2
3
4
5
6
0
1
2
3
4
5
6
V GS , GATE TO SOURCE VOLTAGE (V)
FIGURE 7. TRANSFER CHARACTERISTICS
V DS , DRAIN TO SOURCE VOLTAGE (V)
FIGURE 8. SATURATION CHARACTERISTICS
2.8
2.2
1.6
1.0
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
1.2
1.0
0.8
0.6
V GS = V DS , I D = 250 μ A
V GS = 10V, I D = 75A
0.4
0.4
-80
-40
0
40
80
120
160
200
-80
-40
0
40
80
120
160
200
T J , JUNCTION TEMPERATURE ( o C)
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
?2001 Fairchild Semiconductor Corporation
T J , JUNCTION TEMPERATURE ( o C)
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
HUF75852G3 Rev. C0
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