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| 型号： | HUFA76419D3S |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/10页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 20A DPAK |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 标准包装： | 75 |
| 系列： | UltraFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 20A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 37 毫欧 @ 20A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 27.5nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 900pF @ 25V |
| 功率 - 最大： | 75W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | D-Pak |
| 包装： | 管件 |
HUFA76419D3, HUFA76419D3S
Data Sheet
20A, 60V, 0.043 Ohm, N-Channel, Logic
Level UltraFET? Power MOSFETs
Packaging
December 2001
JEDEC TO-251AA
JEDEC TO-252AA
Features
? Ultra Low On-Resistance
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
GATE
SOURCE
DRAIN
(FLANGE)
- r DS(ON) = 0.037 ?, V GS = 10V
- r DS(ON) = 0.043 ?, V GS = 5V
? Simulation Models
- Temperature Compensated PSPICE? and SABER?
Electrical Models
- Spice and SABER Thermal Impedance Models
HUFA76419D3
Symbol
D
HUFA76419D3S
- www.fairchildsemi.com
? Peak Current vs Pulse Width Curve
? UIS Rating Curve
? Switching Time vs R GS Curves
Ordering Information
PART NUMBER
PACKAGE
BRAND
G
HUFA76419D3
HUFA76419D3S
TO-251AA
TO-252AA
76419D
76419D
S
Absolute Maximum Ratings
NOTE: When ordering, use the entire part number. Add the suffix T
to obtain the variant in tape and reel, e.g., HUFA76419D3ST
T C = 25 o C, Unless Otherwise Specified
HUFA76419D3, HUFA76419D3S
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V DSS
Drain to Gate Voltage (R GS = 20k ? ) (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V GS
Drain Current
Continuous (T C = 25 o C, V GS = 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I D
Continuous (T C = 25 o C, V GS = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I D
Continuous (T C = 100 o C, V GS = 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I D
Continuous (T C = 100 o C, V GS = 4.5V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I DM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P D
Derate Above 25 o C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T J , T STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T L
Package Body for 10s, See Techbrief TB334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T pkg
60
60
± 16
20
20
20
19
Figure 4
Figures 6, 17, 18
75
0.5
-55 to 175
300
260
V
V
V
A
A
A
A
W
W/ o C
o C
o C
o C
NOTE:
1. T J = 25 o C to 150 o C.
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy
of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
?2001 Fairchild Semiconductor Corporation
HUFA76419D3, HUFA76419D3S Rev. B
相关PDF资料 |
PDF描述 |
|---|---|
| CM6460R-334 | CHOKE COMMON MODE 330.0UH SMD |
| NTD50N03R-35G | MOSFET N-CH 25V 7.8A IPAK |
| HUFA76419D3 | MOSFET N-CH 60V 20A IPAK |
| CM6460R-225 | CHOKE COMMON MODE 2200.0UH SMD |
| NTD50N03R-1G | MOSFET N-CH 25V 7.8A IPAK |
相关代理商/技术参数 |
参数描述 |
|---|---|
| HUFA76419D3ST | 功能描述:MOSFET 20a 60V 0.043 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| HUFA76419D3ST_QF085 | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| HUFA76419P3 | 功能描述:MOSFET 20a 60V 0.043 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| HUFA76419P3_S2565 | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| HUFA76419S3S | 功能描述:MOSFET 20a 60V 0.043 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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