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参数资料
| 型号： | HUFA76419D3S |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 4/10页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 20A DPAK |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 标准包装： | 75 |
| 系列： | UltraFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 20A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 37 毫欧 @ 20A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 27.5nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 900pF @ 25V |
| 功率 - 最大： | 75W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | D-Pak |
| 包装： | 管件 |
HUFA76419D3, HUFA76419D3S
Typical Performance Curves
(Continued)
200
100
100 μ s
200
100
If R = 0
t AV = (L)(I AS )/(1.3*RATED BV DSS - V DD )
If R ≠ 0
t AV = (L/R)ln[(I AS *R)/(1.3*RATED BV DSS - V DD ) +1]
10
OPERATION IN THIS
AREA MAY BE
LIMITED BY r DS(ON)
1ms
10
STARTING T J = 150 o C
STARTING T J = 25 o C
1
SINGLE PULSE
T J = MAX RATED T C = 25 o C
10ms
1
1
10
100
200
0.01
0.1
1
10
100
V DS , DRAIN TO SOURCE VOLTAGE (V)
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
50
t AV , TIME IN AVALANCHE (ms)
NOTE: Refer to Fairchild Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
CAPABILITY
50
40
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
V DD = 15V
40
V GS = 10V
V GS = 5V
V GS = 4V
30
30
V GS = 3.5V
20
T J = 25 o C
20
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
10
0
T J = 175 o C
T J = -55 o C
10
0
T C = 25 o C
V GS = 3V
1
2
3
4
5
0
1 2 3
4
V GS , GATE TO SOURCE VOLTAGE (V)
FIGURE 7. TRANSFER CHARACTERISTICS
V DS , DRAIN TO SOURCE VOLTAGE (V)
FIGURE 8. SATURATION CHARACTERISTICS
50
45
I D = 10A
I D = 20A
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
T C = 25 o C
2.5
2.0
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
40
1.5
35
1.0
30
V GS = 10V, I D = 20A
25
2
4 6 8
10
0.5
-80
-40
0
40
80
120
160
200
V GS , GATE TO SOURCE VOLTAGE (V)
FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
?2001 Fairchild Semiconductor Corporation
T J , JUNCTION TEMPERATURE ( o C)
FIGURE 10. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
HUFA76419D3, HUFA76419D3S Rev. B
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相关代理商/技术参数 |
参数描述 |
|---|---|
| HUFA76419D3ST | 功能描述:MOSFET 20a 60V 0.043 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| HUFA76419D3ST_QF085 | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| HUFA76419P3 | 功能描述:MOSFET 20a 60V 0.043 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| HUFA76419P3_S2565 | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| HUFA76419S3S | 功能描述:MOSFET 20a 60V 0.043 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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