- 您现在的位置：买卖IC网 > PDF目录223993 > HY5DU561622DT-6 (HYNIX SEMICONDUCTOR INC) 16M X 16 DDR DRAM, 0.7 ns, PDSO66 PDF资料下载
参数资料
| 型号： | HY5DU561622DT-6 |
| 厂商： | HYNIX SEMICONDUCTOR INC |
| 元件分类： | DRAM |
| 英文描述： | 16M X 16 DDR DRAM, 0.7 ns, PDSO66 |
| 封装： | 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 |
| 文件页数： | 5/28页 |
| 文件大小： | 814K |
| 代理商： | HY5DU561622DT-6 |
第1页第2页第3页第4页当前第5页第6页第7页第8页第9页第10页第11页第12页第13页第14页第15页第16页第17页第18页第19页第20页第21页第22页第23页第24页第25页第26页第27页第28页
Rev. 0.6 / Mar. 2005
13
HY5DU561622DT
CKE FUNCTION TRUTH TABLE
Note :
When CKE=L, all DQ and DQS must be in Hi-Z state.
1. CKE and /CS must be kept high for a minimum of 200 stable input clocks before issuing any command.
2. All command can be stored after 2 clocks from low to high transition of CKE.
3. Illegal if CK is suspended or stopped during the power down mode.
4. Self refresh can be entered only from the all banks idle state.
5. Disabling CK may cause malfunction of any bank which is in active state.
Current
State
CKEn-1
CKEn
/CS
/RAS
/CAS
/WE
/ADD
Action
SELF
REFRESH1
H
X
XX
XXX
INVALID
L
H
X
Exit self refresh, enter idle after tSREX
L
H
L
H
X
Exit self refresh, enter idle after tSREX
LH
L
H
L
X
ILLEGAL
LH
L
H
L
X
ILLEGAL
L
H
L
XXX
ILLEGAL
L
XX
XXX
NOP, continue self refresh
POWER
DOWN2
H
X
XX
XXX
INVALID
L
H
X
Exit power down, enter idle
L
H
L
H
X
Exit power down, enter idle
LH
L
H
L
X
ILLEGAL
LH
L
H
L
X
ILLEGAL
L
H
L
XXX
ILLEGAL
L
XX
XXX
NOP, continue power down mode
ALL BANKS
IDLE4
H
X
See operation command truth table
H
L
LLL
H
X
Enter self refresh
H
L
H
X
Exit power down
H
L
H
X
Exit power down
HL
L
H
L
X
ILLEGAL
HL
L
H
L
X
ILLEGAL
HL
L
H
X
ILLEGAL
H
L
LLLL
X
ILLEGAL
L
XX
XXX
NOP
ANY STATE
OTHER
THAN
ABOVE
H
X
See operation command truth table
H
L
XX
XXX
ILLEGAL5
L
H
XX
XXX
INVALID
L
XX
XXX
INVALID
相关PDF资料 |
PDF描述 |
|---|---|
| HY5DU561622FTP-4I | 16M X 16 DDR DRAM, 0.7 ns, PDSO66 |
| HY5DU56422ALF-J | 64M X 4 DDR DRAM, 0.7 ns, PBGA60 |
| HY5MS5B6LF-H | 16M X 16 DDR DRAM, 6.5 ns, PBGA60 |
| HY5PS1G831ALFP-C4 | 128M X 8 DDR DRAM, PBGA68 |
| HY5PS1G831ALFP-Y5 | 128M X 8 DDR DRAM, PBGA68 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| HY5DU561622DTP | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:256M DDR SDRAM (268,435,456-bit CMOS Double Data Rate(DDR) Synchronous DRAM) |
| HY5DU561622DTP-H | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:256M DDR SDRAM (268,435,456-bit CMOS Double Data Rate(DDR) Synchronous DRAM) |
| HY5DU561622DTP-J | 制造商:SK Hynix Inc 功能描述:SDRAM, DDR, 16M x 16, 66 Pin, Plastic, TSSOP |
| HY5DU561622DTP-K | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:256M DDR SDRAM (268,435,456-bit CMOS Double Data Rate(DDR) Synchronous DRAM) |
| HY5DU561622DTP-L | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:256M DDR SDRAM (268,435,456-bit CMOS Double Data Rate(DDR) Synchronous DRAM) |
发布紧急采购，3分钟左右您将得到回复。