- 您现在的位置：买卖IC网 > PDF目录384468 > HY5PS1G421LM-E3 (HYNIX SEMICONDUCTOR INC) 1Gb DDR2 SDRAM(DDP) PDF资料下载
参数资料
| 型号： | HY5PS1G421LM-E3 |
| 厂商： | HYNIX SEMICONDUCTOR INC |
| 元件分类： | DRAM |
| 英文描述： | 1Gb DDR2 SDRAM(DDP) |
| 中文描述： | 256M X 4 DDR DRAM, 0.6 ns, PBGA63 |
| 封装： | FBGA-63 |
| 文件页数： | 67/79页 |
| 文件大小： | 1109K |
| 代理商： | HY5PS1G421LM-E3 |
第1页第2页第3页第4页第5页第6页第7页第8页第9页第10页第11页第12页第13页第14页第15页第16页第17页第18页第19页第20页第21页第22页第23页第24页第25页第26页第27页第28页第29页第30页第31页第32页第33页第34页第35页第36页第37页第38页第39页第40页第41页第42页第43页第44页第45页第46页第47页第48页第49页第50页第51页第52页第53页第54页第55页第56页第57页第58页第59页第60页第61页第62页第63页第64页第65页第66页当前第67页第68页第69页第70页第71页第72页第73页第74页第75页第76页第77页第78页第79页
Rev. 0.2 / Oct. 2005
67
1
HY5PS12421(L)M
HY5PS12821(L)M
5.4.3 Calibrated Output Driver V-I Characteristics
DDR2 SDRAM output driver characteristics are defined for full strength calibrated operation as selected by
the procedure in OCD impedance adjustment. The below Tables show the data in tabular format suitable for
input into simulation tools. The nominal points represent a device at exactly 18 ohms. The nominal low and
nominal high values represent the range that can be achieved with a maximum 1.5 ohm step size with no
calibration error at the exact nominal conditions only (i.e. perfect calibration procedure, 1.5 ohm maximum
step size guaranteed by specification). Real system calibration error needs to be added to these values. It
must be understood that these V-I curves as represented here or in supplier IBIS models need to be
adjusted to a wider range as a result of any system calibration error. Since this is a system specific phe-
nomena, it cannot be quantified here. The values in the calibrated tables represent just the DRAM portion
of uncertainty while looking at one DQ only. If the calibration procedure is used, it is possible to cause the
device to operate outside the bounds of the default device characteristics tables and figures. In such a situ-
ation, the timing parameters in the specification cannot be guaranteed. It is solely up to the system applica-
tion to ensure that the device is calibrated between the minimum and maximum default values at all times.
If this can’t be guaranteed by the system calibration procedure, re-calibration policy, and uncertainty with
DQ to DQ variation, then it is recommended that only the default values be used. The nominal maximum
and minimum values represent the change in impedance from nominal low and high as a result of voltage
and temperature change from the nominal condition to the maximum and minimum conditions. If calibrated
at an extreme condition, the amount of variation could be as much as from the nominal minimum to the
nominal maximum or vice versa. The driver characteristics evaluation conditions are:
Nominal 25
o
C (T case), VDDQ = 1.8 V, typical process
Nominal Low and Nominal High 25
o
C (T case), VDDQ = 1.8 V, any process
Nominal Minimum TBD
o
C (T case), VDDQ = 1.7 V, any process
Nominal Maximum 0
o
C (T case), VDDQ = 1.9 V, any process
Full Strength Calibrated Pulldown Driver Characteristics
Full Strength Calibrated Pullup Driver Characteristics
Calibrated Pulldown Current (mA)
Voltage (V)
Nominal Minimum
(21 ohms)
Nominal Low (18.75
ohms)
Nominal (18 ohms)Nominohms)
Nominal Maximum (15
ohms)
0.2
0.3
0.4
9.5
14.3
18.7
10.7
16.0
21.0
11.5
16.6
21.6
11.8
17.4
23.0
13.3
20.0
27.0
Calibrated Pullup Current (mA)
Voltage (V)
Nominal Minimum
(21 ohms)
Nominal Low (18.75
ohms)
Nominal (18 ohms)Nominohms)
Nominal Maximum (15
ohms)
0.2
0.3
0.4
-9.5
-14.3
-18.7
-10.7
-16.0
-21.0
-11.4
-16.5
-21.2
-11.8
-17.4
-23.0
-13.3
-20.0
-27.0
相关PDF资料 |
PDF描述 |
|---|---|
| HY5PS1G421M | 1Gb DDR2 SDRAM(DDP) |
| HY5PS1G421M-C4 | 1Gb DDR2 SDRAM(DDP) |
| HY5PS1G421M-E3 | 1Gb DDR2 SDRAM(DDP) |
| HY5PS1G821LM | 1Gb DDR2 SDRAM(DDP) |
| HY5PS1G821LM-C4 | 1Gb DDR2 SDRAM(DDP) |
相关代理商/技术参数 |
参数描述 |
|---|---|
| HY5PS1G421M | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:1Gb DDR2 SDRAM(DDP) |
| HY5PS1G421M-C4 | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:1Gb DDR2 SDRAM(DDP) |
| HY5PS1G421M-E3 | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:1Gb DDR2 SDRAM(DDP) |
| HY5PS1G431AFP | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:1Gb DDR2 SDRAM |
| HY5PS1G431AFP-E3 | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:1Gb DDR2 SDRAM |
发布紧急采购，3分钟左右您将得到回复。