参数资料
型号: HY5PS1G821LM
厂商: Hynix Semiconductor Inc.
英文描述: 1Gb DDR2 SDRAM(DDP)
中文描述: 1G DDR2内存(铂)
文件页数: 65/79页
文件大小: 1109K
代理商: HY5PS1G821LM
Rev. 0.2 / Oct. 2005
65
1
HY5PS12421(L)M
HY5PS12821(L)M
5.4 Default Output V-I characteristics
DDR2 SDRAM output driver characteristics are defined for full strength default operation as selected by the
EMRS1 bits A7-A9 = ‘111’. The above Figures show the driver characteristics graphically, and tables show the
same data in tabular format suitable for input into simulation tools.
5.4.1 Full Strength Default Pulldown Driver Characteristics
Pulldown Current (mA)
Voltage (V)
Minimum (23.4 Ohms)Low (18 ohms)
Nominal Default
High (18 ohms)
Maximum (12.6 Ohms)
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
8.5
12.1
14.7
16.4
17.8
18.6
19.0
19.3
19.7
19.9
20.0
20.1
20.2
20.3
20.4
20.6
11.3
16.5
21.2
25.0
28.3
30.9
33.0
34.5
35.5
36.1
36.6
36.9
37.1
37.4
37.6
37.7
37.9
11.8
16.8
22.1
27.6
32.4
36.9
40.9
44.6
47.7
50.4
52.6
54.2
55.9
57.1
58.4
59.6
60.9
15.9
23.8
31.8
39.7
47.7
55.0
62.3
69.4
75.3
80.5
84.6
87.7
90.8
92.9
94.9
97.0
99.1
101.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
VOUT to VSSQ (V)
0
20
40
60
80
100
120
P
Maximum
Nominal
Default
High
Nominal
Default
Low
Minimum
相关PDF资料
PDF描述
HY5PS1G821LM-C4 1Gb DDR2 SDRAM(DDP)
HY6264A-15 RES 2.74 KOHM 1.0 % 2010S
HY6264A 8KX8-Bit CMOS SRAM
HY6264A-10 8KX8-Bit CMOS SRAM
HY6264A-12 8KX8-Bit CMOS SRAM
相关代理商/技术参数
参数描述
HY5PS1G821LM-C4 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:1Gb DDR2 SDRAM(DDP)
HY5PS1G821LM-E3 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:1Gb DDR2 SDRAM(DDP)
HY5PS1G821M 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:1Gb DDR2 SDRAM(DDP)
HY5PS1G821M-C4 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:1Gb DDR2 SDRAM(DDP)
HY5PS1G821M-E3 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:1Gb DDR2 SDRAM(DDP)