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参数资料
| 型号： | HYMD264646A8J-D43 |
| 厂商： | HYNIX SEMICONDUCTOR INC |
| 元件分类： | DRAM |
| 英文描述： | 64M X 64 DDR DRAM MODULE, 0.7 ns, DMA184 |
| 封装： | 5.250 X 1.250 X 0.150 INCH, DIMM-184 |
| 文件页数： | 1/18页 |
| 文件大小： | 227K |
| 代理商： | HYMD264646A8J-D43 |
64Mx64 bits
Unbuffered DDR SDRAM DIMM
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
responsibility for use of circuits described. No patent licenses are implied.
Rev. 0.3 / June. 2003
1
HYMD264646A8J
DESCRIPTION
Hynix HYMD264646A8J series is unbuffered 184-pin double data rate Synchronous DRAM Dual In-Line Memory Mod-
ules (DIMMs) which are organized as 64Mx64 high-speed memory arrays. Hynix HYMD264646A8J series consists of
sixteen 32Mx8 DDR SDRAM in 400mil TSOPII packages on a184pin glass-epoxy substrate. Hynix HYMD264646A8J
series provide a high performance 8-byte interface in 5.25" width form factor of industry standard. It is suitable for easy
interchange and addition.
Hynix HYMD264646A8J series is designed for high speed of up to 200MHz and offers fully synchronous operations
referenced to both rising and falling edges of differential clock inputs. While all addresses and control inputs are
latched on the rising edges of the clock, Data, Data strobes and Write data masks inputs are sampled on both rising
and falling edges of it. The data paths are internally pipelined and 2-bit prefetched to achieve very high bandwidth. All
input and output voltage levels are compatible with SSTL_2. High speed frequencies, programmable latencies and
burst lengths allow variety of device operation in high performance memory system.
Hynix HYMD264646A8J series incorporates SPD(serial presence detect). Serial presence detect function is imple-
mented via a serial 2,048-bit EEPROM. The first 128 bytes of serial PD data are programmed by Hynix to identify
DIMM type, capacity and other the information of DIMM and the last 128 bytes are available to the customer.
FEATURES
ORDERING INFORMATION
Part No.
Power Supply
Clock Frequency
Interface
Form Factor
HYMD264646A8J-J
VDD=VDDQ=2.5V
166MHz (*DDR333)
SSTL_2
184pin Unbuffered DIMM
5.25 x 1.25 x 0.15 inch
HYMD264646A8J-D4
VDD=VDDQ=2.6V
200MHz (*DDR400)
SSTL_2
184pin Unbuffered DIMM
5.25 x 1.25 x 0.15 inch
HYMD264646A8J-D43
VDD=VDDQ=2.6V
200MHz (*DDR400)
SSTL_2
184pin Unbuffered DIMM
5.25 x 1.25 x 0.15 inch
512MB (64M x 64) Unbuffered DDR DIMM based on
32Mx8 DDR SDRAM
JEDEC Standard 184-pin dual in-line memory mod-
ule (DIMM)
2.5V +/- 0.2V VDD and VDDQ Power supply
2.6V +/- 0.1V VDD and VDDQ Power supply for
DDR400
All inputs and outputs are compatible with SSTL_2
interface
Fully differential clock operations (CK & /CK) with
125MHz/133MHz/166MHz/200MHz
All addresses and control inputs except Data, Data
strobes and Data masks latched on the rising edges
of the clock
Data(DQ), Data strobes and Write masks latched on
both rising and falling edges of the clock
Data inputs on DQS centers when write (centered
DQ)
Data strobes synchronized with output data for read
and input data for write
Programmable CAS Latency 3 / 2 / 2.5 supported
Programmable Burst Length 2 / 4 / 8 with both
sequential and interleave mode
tRAS Lock-out function supported
Internal four bank operations with single pulsed RAS
Auto refresh and self refresh supported
8192 refresh cycles / 64ms
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相关代理商/技术参数 |
参数描述 |
|---|---|
| HYMD264646A8J-J | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:Unbuffered DDR SDRAM DIMM |
| HYMD264646A8-K | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:Unbuffered DDR SDRAM DIMM |
| HYMD264646A8-L | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:Unbuffered DDR SDRAM DIMM |
| HYMD264646A8-M | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:Unbuffered DDR SDRAM DIMM |
| HYMD264646AL8 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:64Mx64|2.5V|M/K/H/L|x16|DDR SDRAM - Unbuffered DIMM 512MB |
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