参数资料
型号: HYMD264646A8J-D43
厂商: HYNIX SEMICONDUCTOR INC
元件分类: DRAM
英文描述: 64M X 64 DDR DRAM MODULE, 0.7 ns, DMA184
封装: 5.250 X 1.250 X 0.150 INCH, DIMM-184
文件页数: 2/18页
文件大小: 227K
代理商: HYMD264646A8J-D43
HYMD264646A8J
Rev. 0.3 / June. 2003
10
AC CHARACTERISTICS (AC operating conditions unless otherwise noted)
- continued -
Parameter
Symbol
DDR333
Unit
Note
Min
Max
Input Pulse Width
tIPW
2.2
ns
6
Write DQS High Level Width
tDQSH
0.35
-
CK
Write DQS Low Level Width
tDQSL
0.35
-
CK
Clock to First Rising edge of DQS-In
tDQSS
0.75
1.25
CK
Data-In Setup Time to DQS-In (DQ & DM)
tDS
0.45
-
ns
6,7, 11~13
Data-in Hold Time to DQS-In (DQ & DM)
tDH
0.45
-
ns
6,7, 11~13
DQ & DM Input Pulse Width
tDIPW
1.75
-
ns
Read DQS Preamble Time
tRPRE
0.9
1.1
CK
Read DQS Postamble Time
tRPST
0.4
0.6
CK
Write DQS Preamble Setup Time
tWPRES
0-
CK
Write DQS Preamble Hold Time
tWPREH
0.25
-
CK
Write DQS Postamble Time
tWPST
0.4
0.6
CK
Mode Register Set Delay
tMRD
2-
CK
Exit Self Refresh to Any Execute Command
tXSC
200
-
CK
8
Average Periodic Refresh Interval
tREFI
-7.8
us
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