参数资料
型号: HYMD264646A8J-D43
厂商: HYNIX SEMICONDUCTOR INC
元件分类: DRAM
英文描述: 64M X 64 DDR DRAM MODULE, 0.7 ns, DMA184
封装: 5.250 X 1.250 X 0.150 INCH, DIMM-184
文件页数: 15/18页
文件大小: 227K
代理商: HYMD264646A8J-D43
HYMD264646A8J
Rev. 0.3 / June. 2003
6
CAPACITANCE (TA=25 oC, f=100MHz )
Note :
1. VDD = min. to max., VDDQ = 2.3V to 2.7V, VODC = VDDQ/2, VOpeak-to-peak = 0.2V
2. Pins not under test are tied to GND.
3. These values are guaranteed by design and are tested on a sample basis only.
OUTPUT LOAD CIRCUIT
Parameter
Pin
Symbol
Min
Max
Unit
Input Capacitance
A0 ~ A12, BA0, BA1
CIN1
90
104
pF
Input Capacitance
/RAS, /CAS, /WE
CIN2
90
104
pF
Input Capacitance
CKE0, CKE1
CIN3
58
72
pF
Input Capacitance
CS0, CS1
CIN4
58
72
pF
Input Capacitance
CK0, /CK0, CK1, /CK1, CK2,/CK2
CIN5
30
45
pF
Input Capacitance
DM0 ~ DM7
CIN6
12
17
pF
Data Input / Output Capacitance
DQ0 ~ DQ63, DQS0 ~ DQS7
CIO1
12
17
pF
VREF
VTT
RT=50
Zo=50
CL=30pF
Output
相关PDF资料
PDF描述
HYS72V64220GU-7.5-C 64M X 72 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA168
HZ11C1LRH 0.4 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35
HZ33-2LTA 0.4 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35
HZ36-1LTD 0.4 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35
HZ36-3LTD 0.4 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35
相关代理商/技术参数
参数描述
HYMD264646A8J-J 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:Unbuffered DDR SDRAM DIMM
HYMD264646A8-K 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:Unbuffered DDR SDRAM DIMM
HYMD264646A8-L 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:Unbuffered DDR SDRAM DIMM
HYMD264646A8-M 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:Unbuffered DDR SDRAM DIMM
HYMD264646AL8 制造商:未知厂家 制造商全称:未知厂家 功能描述:64Mx64|2.5V|M/K/H/L|x16|DDR SDRAM - Unbuffered DIMM 512MB