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参数资料
| 型号： | IDT7007L20G |
| 厂商： | IDT, Integrated Device Technology Inc |
| 文件页数： | 10/21页 |
| 文件大小： | 0K |
| 描述： | IC SRAM 256KBIT 20NS 68PGA |
| 标准包装： | 3 |
| 格式 - 存储器： | RAM |
| 存储器类型： | SRAM - 双端口，异步 |
| 存储容量： | 256K (32K x 8) |
| 速度： | 20ns |
| 接口： | 并联 |
| 电源电压： | 4.5 V ~ 5.5 V |
| 工作温度： | 0°C ~ 70°C |
| 封装/外壳： | 68-BPGA |
| 供应商设备封装： | 68-PGA（29.46x29.46） |
| 包装： | 托盘 |
| 其它名称： | 7007L20G |
IDT7007S/L
High-Speed 32K x 8 Dual-Port Static RAM
Military, Industrial and Commercial Temperature Ranges
AC Electrical Characteristics Over the
Operating Temperature and Supply Voltage (5)
7007X15
Com'l Only
7007X20
Com'l & Ind
7007X25
Com'l, Ind
& Military
Symbol
Parameter
Min.
Max.
Min.
Max.
Min.
Max.
Unit
WRITE CYCLE
t WC
Write Cycle Time
15
____
20
____
25
____
ns
t EW
Chip Enable to End-of-Write
(3)
12
____
15
____
20
____
ns
t AW
t AS
t WP
t WR
t DW
Address Valid to End-of-Write
Address Set-up Time (3)
Write Pulse Width
Write Recovery Time
Data Valid to End-of-Write
12
0
12
0
10
____
____
____
____
____
15
0
15
0
15
____
____
____
____
____
20
0
20
0
15
____
____
____
____
____
ns
ns
ns
ns
ns
t HZ
Output High-Z Time
(1,2)
____
10
____
12
____
15
ns
t DH
Data Hold Time
(4)
0
____
0
____
0
____
ns
t WZ
t OW
t SWRD
t SPS
Write Enable to Output in High-Z (1,2)
Output Active from End-of-Write (1,2,4)
SEM Flag Write to Read Time
SEM Flag Contention Window
____
0
5
5
10
____
____
____
____
0
5
5
12
____
____
____
____
0
5
5
15
____
____
____
ns
ns
ns
ns
2940 tbl 13a
7007X35
Com'l, Ind
& Military
7007X55
Com'l, Ind
& Military
Symbol
Parameter
Min.
Max.
Min.
Max.
Unit
WRITE CYCLE
t WC
Write Cycle Time
35
____
55
____
ns
t EW
Chip Enable to End-of-Write
(3)
30
____
45
____
ns
t AW
t AS
t WP
t WR
t DW
Address Valid to End-of-Write
Address Set-up Time (3)
Write Pulse Width
Write Recovery Time
Data Valid to End-of-Write
30
0
25
0
15
____
____
____
____
____
45
0
40
0
30
____
____
____
____
____
ns
ns
ns
ns
ns
t HZ
Output High-Z Time
(1,2)
____
12
____
25
ns
t DH
t WZ
Data Hold Time (4)
Write Enable to Output in High-Z (1,2)
0
____
____
12
0
____
____
25
ns
ns
t OW
t SWRD
t SPS
Output Active from End-of-Write
SEM Flag Write to Read Time
SEM Flag Contention Window
(1,2,4)
0
5
5
____
____
____
0
5
5
____
____
____
ns
ns
ns
2940 tbl 13b
NOTES:
1. Transition is measured 0mV from Low- or High-impedance voltage with Output Test Load (Figure 2).
2. This parameter is guaranteed by device characterization, but is not production tested.
3. To access RAM, CE = V IL and SEM = V IH . To access semaphore, CE = V IH and SEM = V IL . Either condition must be valid for the entire t EW time.
4. The specification for t DH must be met by the device supplying write data to the RAM under all operating conditions. Although t DH and t OW values will vary over voltage
and temperature, the actual t DH will always be smaller than the actual t OW .
5. 'X' in part numbers indicates power rating (S or L).
10
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IDT7007L20GB | 制造商:IDT 制造商全称:Integrated Device Technology 功能描述:HIGH-SPEED 32K x 8 DUAL-PORT STATIC RAM |
| IDT7007L20GI | 制造商:IDT 制造商全称:Integrated Device Technology 功能描述:HIGH-SPEED 32K x 8 DUAL-PORT STATIC RAM |
| IDT7007L20J | 功能描述:IC SRAM 256KBIT 20NS 68PLCC RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口，同步 存储容量:1.125M（32K x 36） 速度:5ns 接口:并联 电源电压:3.15 V ~ 3.45 V 工作温度:-40°C ~ 85°C 封装/外壳:256-LBGA 供应商设备封装:256-CABGA（17x17） 包装:带卷 (TR) 其它名称:70V3579S5BCI8 |
| IDT7007L20J8 | 功能描述:IC SRAM 256KBIT 20NS 68PLCC RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口，同步 存储容量:1.125M（32K x 36） 速度:5ns 接口:并联 电源电压:3.15 V ~ 3.45 V 工作温度:-40°C ~ 85°C 封装/外壳:256-LBGA 供应商设备封装:256-CABGA（17x17） 包装:带卷 (TR) 其它名称:70V3579S5BCI8 |
| IDT7007L20JB | 制造商:IDT 制造商全称:Integrated Device Technology 功能描述:HIGH-SPEED 32K x 8 DUAL-PORT STATIC RAM |
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