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| 型号： | IDT7007L20G |
| 厂商： | IDT, Integrated Device Technology Inc |
| 文件页数： | 6/21页 |
| 文件大小： | 0K |
| 描述： | IC SRAM 256KBIT 20NS 68PGA |
| 标准包装： | 3 |
| 格式 - 存储器： | RAM |
| 存储器类型： | SRAM - 双端口，异步 |
| 存储容量： | 256K (32K x 8) |
| 速度： | 20ns |
| 接口： | 并联 |
| 电源电压： | 4.5 V ~ 5.5 V |
| 工作温度： | 0°C ~ 70°C |
| 封装/外壳： | 68-BPGA |
| 供应商设备封装： | 68-PGA（29.46x29.46） |
| 包装： | 托盘 |
| 其它名称： | 7007L20G |
IDT7007S/L
High-Speed 32K x 8 Dual-Port Static RAM
Military, Industrial and Commercial Temperature Ranges
DC Electrical Characteristics Over the Operating
Temperature and Supply Voltage Range (V CC = 5.0V ± 10%)
7007S
7007L
Input Leakage Current
Symbol
|I LI |
|I LO |
V OL
V OH
Parameter
(1)
Output Leakage Current
Output Low Voltage
Output High Voltage
Test Conditions
V CC = 5.5V, V IN = 0V to V CC
CE = V IH , V OUT = 0V to V CC
I OL = 4mA
I OH = -4mA
Min.
___
___
___
2.4
Max.
10
10
0.4
___
Min.
___
___
___
2.4
Max.
5
5
0.4
___
Unit
μA
μA
V
V
NOTE:
1. At Vcc < 2.0V, input leakages are undefined.
DC Electrical Characteristics Over the Operating
Temperature and Supply Voltage Range (1) (V CC = 5.0V ± 10%)
2940 tbl 08
7007X15
Com'l Only
7007X20
Com'l & Ind
7007X25
Com'l, Ind
& Military
Symbol
Parameter
Test Condition
Version
Typ. (2)
Max.
Typ. (2)
Max.
Typ. (2)
Max.
Unit
I CC
Dynamic Operating
Current
(Both Ports Active)
CE = V IL , Outputs Disabled
SEM = V IH
f = f MAX (3)
COM'L
MIL &
S
L
S
190
190
___
325
285
___
180
180
___
315
275
___
170
170
170
305
265
345
mA
IND
L
___
___
180
315
170
305
I SB1
Standby Current
(Both Ports - TTL Level
Inputs)
CE L = CE R = V IH
SEM R = SEM L = V IH
f = f MAX (3)
COM'L
MIL &
S
L
S
35
35
___
85
60
___
30
30
___
85
60
___
25
25
25
85
60
100
mA
IND
L
___
___
30
80
25
80
I SB2
Standby Current
(One Port - TTL Level
Inputs)
CE "A" = V IL and CE "B" = V IH (5)
Active Port Outputs Disabled,
f=f MAX (3)
SEM R = SEM L = V IH
COM'L
MIL &
S
L
S
125
125
___
220
190
___
115
115
___
210
180
___
105
105
105
200
170
230
mA
IND
L
___
___
115
210
105
200
I SB3
I SB4
Full Standby Current
(Both Ports - All CMOS
Level Inputs)
Full Standby Current
(One Port - All CMOS
Level Inputs)
Both Ports CE L and
CE R > V CC - 0.2V
V IN > V CC - 0.2V or
VIN < 0.2V, f = 0 (4)
SEM R = SEM L > V CC - 0.2V
CE "A" < 0.2V and
CE "B" > V CC - 0.2V (5)
SEM R = SEM L > V CC - 0.2V
COM'L
MIL &
IND
COM'L
S
L
S
L
S
L
1.0
0.2
___
___
120
120
15
5
___
___
190
160
1.0
0.2
___
0.2
110
110
15
5
___
10
185
160
1.0
0.2
1.0
0.2
100
100
15
5
30
10
175
160
mA
mA
V IN > V CC - 0.2V or V IN < 0.2V
Active Port Outputs Disabled
f = f MAX (3)
MIL &
IND
S
L
___
___
___
___
___
110
___
185
100
100
200
175
NOTES:
2940 tbl 09
1. 'X' in part numbers indicates power rating (S or L)
2. V CC = 5V, T A = +25°C, and are not production tested. I CCDC = 120mA (Typ.)
3. At f = f MAX , address and control lines (except Output Enable) are cycling at the maximum frequency read cycle of 1/t RC, and using “AC Test Conditions” of input
levels of GND to 3V.
4. f = 0 means no address or control lines change.
5. Port "A" may be either left or right port. Port "B" is the opposite from port "A".
6
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IDT7007L20GB | 制造商:IDT 制造商全称:Integrated Device Technology 功能描述:HIGH-SPEED 32K x 8 DUAL-PORT STATIC RAM |
| IDT7007L20GI | 制造商:IDT 制造商全称:Integrated Device Technology 功能描述:HIGH-SPEED 32K x 8 DUAL-PORT STATIC RAM |
| IDT7007L20J | 功能描述:IC SRAM 256KBIT 20NS 68PLCC RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口，同步 存储容量:1.125M（32K x 36） 速度:5ns 接口:并联 电源电压:3.15 V ~ 3.45 V 工作温度:-40°C ~ 85°C 封装/外壳:256-LBGA 供应商设备封装:256-CABGA（17x17） 包装:带卷 (TR) 其它名称:70V3579S5BCI8 |
| IDT7007L20J8 | 功能描述:IC SRAM 256KBIT 20NS 68PLCC RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口，同步 存储容量:1.125M（32K x 36） 速度:5ns 接口:并联 电源电压:3.15 V ~ 3.45 V 工作温度:-40°C ~ 85°C 封装/外壳:256-LBGA 供应商设备封装:256-CABGA（17x17） 包装:带卷 (TR) 其它名称:70V3579S5BCI8 |
| IDT7007L20JB | 制造商:IDT 制造商全称:Integrated Device Technology 功能描述:HIGH-SPEED 32K x 8 DUAL-PORT STATIC RAM |
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