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参数资料
| 型号： | IDT7009L20PFI |
| 厂商： | IDT, Integrated Device Technology Inc |
| 文件页数： | 10/17页 |
| 文件大小： | 0K |
| 描述： | IC SRAM 1MBIT 20NS 100TQFP |
| 标准包装： | 6 |
| 格式 - 存储器： | RAM |
| 存储器类型： | SRAM - 双端口，异步 |
| 存储容量： | 1M (128K x 8) |
| 速度： | 20ns |
| 接口： | 并联 |
| 电源电压： | 4.5 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 100-LQFP |
| 供应商设备封装： | 100-TQFP（14x14） |
| 包装： | 托盘 |
| 其它名称： | 7009L20PFI |
IDT7009L
High-Speed 128K x 8 Dual-Port Static RAM
Industrial and Commercial Temperature Ranges
AC Electrical Characteristics Over the
Operating Temperature and Supply Voltage Range
7009L15
Com'l Only
7009L20
Com'l & Ind
Symbol
Parameter
Min.
Max.
Min.
Max.
Unit
BUSY TIMING (M/ S =V IH )
BUSY Disable to Valid Data
Write Hold After BUSY
t BAA
t BDA
t BAC
t BDC
t APS
t BDD
t WH
BUSY Access Time from Address Match
BUSY Disable Time from Address Not Matched
BUSY Access Time from Chip Enable Low
BUSY Access Time from Chip Enable High
Arbitration Priority Set-up Time (2)
(3)
(5)
____
____
____
____
5
____
12
15
15
15
15
____
15
____
____
____
____
____
5
____
15
20
20
20
17
____
17
____
ns
ns
ns
ns
ns
ns
ns
BUSY TIMING (M/ S =V IL )
t WB
t WH
BUSY Input to Write (4)
Write Hold After BUSY (5)
0
12
____
____
0
15
____
____
ns
ns
PORT-TO-PORT DELAY TIMING
t WDD
Write Pulse to Data Delay (1)
____
30
____
45
ns
t DDD
Write Data Valid to Read Data Delay
(1)
____
25
____
30
ns
NOTES:
4839 tbl 14
1. Port-to-port delay through RAM cells from writing port to reading port, refer to "Timing Waveform of Write with Port-to-Port Read and BUSY (M/ S = V IH )".
2. To ensure that the earlier of the two ports wins.
3. t BDD is a calculated parameter and is the greater of 0, t WDD – t WP (actual) or t DDD – t DW (actual).
4. To ensure that the write cycle is inhibited on port "B" during contention on port "A".
5. To ensure that a write cycle is completed on port "B" after contention on port "A".
10
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| IDT7009L20PFI8 | 功能描述:IC SRAM 1MBIT 20NS 100TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口，同步 存储容量:1.125M（32K x 36） 速度:5ns 接口:并联 电源电压:3.15 V ~ 3.45 V 工作温度:-40°C ~ 85°C 封装/外壳:256-LBGA 供应商设备封装:256-CABGA（17x17） 包装:带卷 (TR) 其它名称:70V3579S5BCI8 |
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