- 您现在的位置：买卖IC网 > Datasheet目录328 > IDT7009L20PFI (IDT, Integrated Device Technology Inc)IC SRAM 1MBIT 20NS 100TQFP Datasheet资料下载
参数资料
| 型号： | IDT7009L20PFI |
| 厂商： | IDT, Integrated Device Technology Inc |
| 文件页数： | 3/17页 |
| 文件大小： | 0K |
| 描述： | IC SRAM 1MBIT 20NS 100TQFP |
| 标准包装： | 6 |
| 格式 - 存储器： | RAM |
| 存储器类型： | SRAM - 双端口，异步 |
| 存储容量： | 1M (128K x 8) |
| 速度： | 20ns |
| 接口： | 并联 |
| 电源电压： | 4.5 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 100-LQFP |
| 供应商设备封装： | 100-TQFP（14x14） |
| 包装： | 托盘 |
| 其它名称： | 7009L20PFI |
IDT7009L
High-Speed 128K x 8 Dual-Port Static RAM
Pin Names
Industrial and Commercial Temperature Ranges
Left Port
CE 0L , CE 1L
R/ W L
OE L
A 0L - A 16L
I/O 0L - I/O 7L
SEM L
INT L
BUSY L
Right Port
CE 0R , CE 1R
R/ W R
OE R
A 0R - A 16R
I/O 0R - I/O 7R
SEM R
INT R
BUSY R
M/ S
V CC
GND
Names
Chip Enables
Read/Write Enable
Output Enable
Address
Data Input/Output
Semaphore Enable
Interrupt Flag
Busy Flag
Master or Slave Select
Power
Ground
4839 tbl 01
Absolute Maximum Ratings (1)
Symbol Rating Commercial Military
& Industrial
Unit
Recommended DC Operating
Conditions
V TERM (2)
Terminal Voltage
-0.5 to +7.0
-0.5 to +7.0
V
Symbol
Parameter
Min.
Typ.
Max.
Unit
with Respect
V CC
Supply Voltage
4.5
5.0
5.5
V
to GND
T BIAS
Temperature
-55 to +125
-65 to +135
o
C
GND
Ground
0
0
0
V
Under Bias
V IH
Input High Voltage
2.2
____
6.0 (2)
V
T STG
Storage
Temperature
-65 to +150
-65 to +150
o
C
V IL
Input Low Voltage
-0.5 (1)
____
0.8
V
4839 tbl 04
I OUT
DC Output Current
50
50
mA
NOTES:
1. V IL > -1.5V for pulse width less than 10ns.
NOTES:
4839 tbl 02
2. V TERM must not exceed Vcc + 10%.
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these or any other conditions above those
indicated in the operational sections of this specification is not implied. Exposure
to absolute maximum rating conditions for extended periods may affect
reliability.
2. V TERM must not exceed Vcc + 10% for more than 25% of the cycle time or 10ns
Capacitance
(T A = +25°C, f = 1.0MHz) (TQFP Only)
maximum, and is limited to < 20mA for the period of V TERM > Vcc + 10%.
Maximum Operating Temperature
and Supply Voltage
Symbol
C IN
C OUT
NOTES:
Parameter (1)
Input Capacitance
Output Capacitance
Conditions (2)
V IN = 3dV
V OUT = 3dV
Max.
9
10
Unit
pF
pF
4839 tbl 05
Grade
Ambient
Temperature (2)
GND
Vcc
1. This parameter is determined by device characterization but is not production
tested.
2. 3dV represents the interpolated capacitance when the input and output signals
-55 C to +125 C
0 C to +70 C
Military
Commercial
Industrial
O O
O O
-40 O C to +85 O C
0V
0V
0V
5.0V + 10%
5.0V + 10%
5.0V + 10%
switch from 0V to 3V or from 3V to 0V.
NOTES:
4839 tbl 03
1. This is the parameter T A . This is the "instant on" case temperature.
3
6.42
相关PDF资料 |
PDF描述 |
|---|---|
| IDT70125L25JG | IC SRAM 18KBIT 25NS 52PLCC |
| IDT7014S12JG | IC SRAM 36KBIT 12NS 52PLCC |
| IDT7015L35G | IC SRAM 72KBIT 35NS 68PGA |
| IDT7016L35G | IC SRAM 144KBIT 35NS 68PGA |
| IDT7019L20PFI | IC SRAM 1.125MBIT 20NS 100TQFP |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IDT7009L20PFI8 | 功能描述:IC SRAM 1MBIT 20NS 100TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口，同步 存储容量:1.125M（32K x 36） 速度:5ns 接口:并联 电源电压:3.15 V ~ 3.45 V 工作温度:-40°C ~ 85°C 封装/外壳:256-LBGA 供应商设备封装:256-CABGA（17x17） 包装:带卷 (TR) 其它名称:70V3579S5BCI8 |
| IDT70101L25J | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x9 Dual-Port SRAM |
| IDT70101L25L52 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x9 Dual-Port SRAM |
| IDT70101L35J | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x9 Dual-Port SRAM |
| IDT70101L35L52 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x9 Dual-Port SRAM |
发布紧急采购，3分钟左右您将得到回复。