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参数资料
| 型号： | IDT70P258L55BYI |
| 厂商： | IDT, Integrated Device Technology Inc |
| 文件页数： | 10/23页 |
| 文件大小： | 0K |
| 描述： | IC SRAM 128KBIT 55NS 100BGA |
| 标准包装： | 90 |
| 格式 - 存储器： | RAM |
| 存储器类型： | SRAM - 双端口，异步 |
| 存储容量： | 128K（8K x 16） |
| 速度： | 55ns |
| 接口： | 并联 |
| 电源电压： | 1.7 V ~ 1.9 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 100-VFBGA |
| 供应商设备封装： | 100-CABGA（6x6） |
| 包装： | 托盘 |
| 其它名称： | 70P258L55BYI |
IDT70P258/248L
Low Power 1.8V 8K/4K x 16 Dual-Port Static RAM
Industrial Temperature Range
AC Electrical Characteristics Over the
Operating Temperature and Supply Voltage (4)
70P258/248
Ind'l Only
Symbol
Parameter
Min.
Max.
Unit
WRITE CYCLE
t WC
t EW
t AW
Write Cycle Time
Chip Enable to End-of-Write (3)
Address Valid to End-of-Write
55
45
45
____
____
____
ns
ns
ns
t AS
Address Set-up Time
(3)
0
____
ns
t WP
t WR
t DW
t HZ
Write Pulse Width
Write Recovery Time
Data Valid to End-of-Write
Output High-Z Time (1,2)
40
0
30
____
____
____
____
25
ns
ns
ns
ns
t DH
Data Hold Time
(4)
0
____
ns
Write Enable to Output in High-Z
t WZ
(1,2)
____
25
ns
t OW
t SWRD
t SPS
Output Active from End-of-Write
SEM Flag Write to Read Time
SEM Flag Contention Window
(1,2,4)
0
10
10
____
____
____
ns
ns
ns
NOTES:
5675 tbl 12
1. Transition is measured 0mV from Low or High-impedance voltage with Output Test Load.
2. This parameter is guaranteed by device characterization, but is not production tested.
3. To access SRAM, CE = V IL , UB or LB = V IL , SEM = V IH . To access semaphore, CE = V IH or UB and LB = V IH and SEM = V IL . Either condition must be valid for
the entire t EW time.
4. The specification for t DH must be met by the device supplying write data to the SRAM under all operating conditions. Although t DH and t OW values will vary over
voltage and temperature, the actual t DH will always be smaller than the actual t OW .
10
6.42
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IDT70P258L55BYI8 | 功能描述:IC SRAM 128KBIT 55NS 100BGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:45 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口，异步 存储容量:128K（8K x 16） 速度:15ns 接口:并联 电源电压:3 V ~ 3.6 V 工作温度:0°C ~ 70°C 封装/外壳:100-LQFP 供应商设备封装:100-TQFP（14x14） 包装:托盘 其它名称:70V25S15PF |
| IDT70P259L65BYGI | 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 128KBIT 65NS 100FPBGA |
| IDT70P259L65BYGI8 | 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 128KBIT 65NS 100FPBGA |
| IDT70P259L90BYGI | 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 128KBIT 90NS 100FPBGA |
| IDT70P259L90BYGI8 | 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 128KBIT 90NS 100FPBGA |
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