- 您现在的位置：买卖IC网 > Datasheet目录328 > IDT70P258L55BYI (IDT, Integrated Device Technology Inc)IC SRAM 128KBIT 55NS 100BGA Datasheet资料下载
参数资料
| 型号： | IDT70P258L55BYI |
| 厂商： | IDT, Integrated Device Technology Inc |
| 文件页数： | 15/23页 |
| 文件大小： | 0K |
| 描述： | IC SRAM 128KBIT 55NS 100BGA |
| 标准包装： | 90 |
| 格式 - 存储器： | RAM |
| 存储器类型： | SRAM - 双端口，异步 |
| 存储容量： | 128K（8K x 16） |
| 速度： | 55ns |
| 接口： | 并联 |
| 电源电压： | 1.7 V ~ 1.9 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 100-VFBGA |
| 供应商设备封装： | 100-CABGA（6x6） |
| 包装： | 托盘 |
| 其它名称： | 70P258L55BYI |
IDT70P258/248L
Low Power 1.8V 8K/4K x 16 Dual-Port Static RAM
Industrial Temperature Range
Waveform of BUSY Arbitration Controlled by CE Timing (1) (M/ S = V IH )
ADDR "A"
and "B"
CE "A"
CE "B"
BUSY "B"
t APS (2)
t BAC
ADDRESSES MATCH
t BDC
,
5675 drw 12
Waveform of BUSY Arbitration Cycle Controlled by Address Match
Timing (1) (M/ S = V IH )
ADDR "A"
ADDR "B"
t APS
(2)
ADDRESS "N"
MATCHING ADDRESS "N"
BUSY "B"
t BAA
t BDA
,
5675 drw 13
NOTES:
1. All timing is the same for left and right ports. Port “A” may be either the left or right port. Port “B” is the port opposite from “A”.
2. If t APS is not satisfied, the BUSY signal will be asserted on one side or another but there is no guarantee on which side BUSY will be asserted.
AC Electrical Characteristics Over the
Operating Temperature and Supply Voltage Range
70P258/248
Ind'l Only
Symbol
Parameter
Min.
Max.
Unit
INTERRUPT TIMING
t AS
t WR
t INS
t INR
Address Set-up Time
Write Recovery Time
Interrupt Set Time
Interrupt Reset Time
0
0
____
____
____
____
45
45
ns
ns
ns
ns
5675 tbl 14
15
6.42
相关PDF资料 |
PDF描述 |
|---|---|
| IDT70T3339S200BCG | IC SRAM 9MBIT 200MHZ 256BGA |
| IDT70T3509MS133BP | IC SRAM 36MBIT 133MHZ 256BGA |
| IDT70T3519S133DRI | IC SRAM 9MBIT 133MHZ 208QFP |
| IDT70T3539MS166BCG | IC SRAM 18MBIT 166MHZ 256BGA |
| IDT70T3719MS166BBG | IC SRAM 18MBIT 166MHZ 324BGA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IDT70P258L55BYI8 | 功能描述:IC SRAM 128KBIT 55NS 100BGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:45 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口，异步 存储容量:128K（8K x 16） 速度:15ns 接口:并联 电源电压:3 V ~ 3.6 V 工作温度:0°C ~ 70°C 封装/外壳:100-LQFP 供应商设备封装:100-TQFP（14x14） 包装:托盘 其它名称:70V25S15PF |
| IDT70P259L65BYGI | 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 128KBIT 65NS 100FPBGA |
| IDT70P259L65BYGI8 | 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 128KBIT 65NS 100FPBGA |
| IDT70P259L90BYGI | 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 128KBIT 90NS 100FPBGA |
| IDT70P259L90BYGI8 | 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 128KBIT 90NS 100FPBGA |
发布紧急采购，3分钟左右您将得到回复。