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参数资料
型号： IDT70T3519S133DRI
厂商： IDT, Integrated Device Technology Inc
文件页数： 7/28页
文件大小： 0K
描述： IC SRAM 9MBIT 133MHZ 208QFP
标准包装： 6
格式 - 存储器： RAM
存储器类型： SRAM - 双端口，同步
存储容量： 9M（256K x 36）
速度： 133MHz
接口： 并联
电源电压： 2.4 V ~ 2.6 V
工作温度： -40°C ~ 85°C
封装/外壳： 208-BFQFP
供应商设备封装： 208-PQFP（28x28）
包装： 托盘
其它名称： 70T3519S133DRI
IDT70T3519/99/89S
High-Speed 2.5V 256/128/64K x 36 Dual-Port Synchronous Static RAM
Truth Table I—Read/Write and Enable Control
Industrial and Commercial Temperature Ranges
(1,2,3,4)
Byte 3
Byte 2
Byte 1
Byte 0
OE
X
X
X
X
X
X
X
X
X
X
L
L
L
L
L
L
L
H
X
CLK
↑
↑
↑
↑
↑
↑
↑
↑
↑
↑
↑
↑
↑
↑
↑
↑
↑
↑
X
CE 0
H
X
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
X
X
CE 1
X
L
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
X
X
BE 3
X
X
H
H
H
H
L
H
L
L
H
H
H
L
H
L
L
X
X
BE 2
X
X
H
H
H
L
H
H
L
L
H
H
L
H
H
L
L
X
X
BE 1
X
X
H
H
L
H
H
L
H
L
H
L
H
H
L
H
L
X
X
BE 0
X
X
H
L
H
H
H
L
H
L
L
H
H
H
L
H
L
X
X
R/ W
X
X
X
L
L
L
L
L
L
L
H
H
H
H
H
H
H
X
X
ZZ
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
H
I/O 27-35
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
D IN
High-Z
D IN
D IN
High-Z
High-Z
High-Z
D OUT
High-Z
D OUT
D OUT
High-Z
High-Z
I/O 18-26
High-Z
High-Z
High-Z
High-Z
High-Z
D IN
High-Z
High-Z
D IN
D IN
High-Z
High-Z
D OUT
High-Z
High-Z
D OUT
D OUT
High-Z
High-Z
I/O 9-17
High-Z
High-Z
High-Z
High-Z
D IN
High-Z
High-Z
D IN
High-Z
D IN
High-Z
D OUT
High-Z
High-Z
D OUT
High-Z
D OUT
High-Z
High-Z
I/O 0-8
High-Z
High-Z
High-Z
D IN
High-Z
High-Z
High-Z
D IN
High-Z
D IN
D OUT
High-Z
High-Z
High-Z
D OUT
High-Z
D OUT
High-Z
High-Z
MODE
Deselected –Power Down
Deselected –Power Down
All Bytes Deselected
Write to Byte 0 Only
Write to Byte 1 Only
Write to Byte 2 Only
Write to Byte 3 Only
Write to Lower 2 Bytes Only
Write to Upper 2 bytes Only
Write to All Bytes
Read Byte 0 Only
Read Byte 1 Only
Read Byte 2 Only
Read Byte 3 Only
Read Lower 2 Bytes Only
Read Upper 2 Bytes Only
Read All Bytes
Outputs Disabled
Sleep Mode
NOTES:
1. "H" = V IH, "L" = V IL, "X" = Don't Care.
2. ADS , CNTEN , REPEAT = X.
3. OE and ZZ are asynchronous input signals.
4. It is possible to read or write any combination of bytes during a given access. A few representative samples have been illustrated here.
5666 tbl 02
Truth Table II—Address Counter Control
(1,2)
Previous
Internal
L
Address
An
X
X
X
Internal
Address
X
An
An + 1
X
Address
Used
An
An + 1
An + 1
An
CLK
↑
↑
↑
↑
ADS
L (4)
H
H
X
CNTEN
X
(5)
H
X
REPEAT (6)
H
H
H
L (4)
I/O (3)
D I/O (n)
D I/O (n+1)
D I/O (n+1)
D I/O (n)
MODE
External Address Used
Counter Enabled —Internal Address generation
External Addre ss Blocked —Counter disab led (An + 1 reused)
Counter Set to last valid ADS load
NOTES:
5666 tbl 03
1. "H" = V IH, "L" = V IL, "X" = Don't Care.
2. Read and write operations are controlled by the appropriate setting of R/ W , CE 0 , CE 1 , BE n and OE .
3. Outputs configured in flow-through output mode: if outputs are in pipelined mode the data out will be delayed by one cycle.
4. ADS and REPEAT are independent of all other memory control signals including CE 0 , CE 1 and BE n
5. The address counter advances if CNTEN = V IL on the rising edge of CLK, regardless of all other memory control signals including CE 0 , CE 1 , BE n.
6. When REPEAT is asserted, the counter will reset to the last valid address loaded via ADS . This value is not set at power-up: a known location should be loaded
via ADS during initialization if desired. Any subsequent ADS access during operations will update the REPEAT address location.
7
6.42
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