参数资料
型号: IDT70V261L25PFGI
厂商: IDT, Integrated Device Technology Inc
文件页数: 10/17页
文件大小: 0K
描述: IC SRAM 256KBIT 25NS 100TQFP
标准包装: 45
格式 - 存储器: RAM
存储器类型: SRAM - 双端口,异步
存储容量: 256K(16K x 16)
速度: 25ns
接口: 并联
电源电压: 3 V ~ 3.6 V
工作温度: -40°C ~ 85°C
封装/外壳: 100-LQFP
供应商设备封装: 100-TQFP(14x14)
包装: 托盘
其它名称: 70V261L25PFGI
IDT70V261S/L
High-Speed 16K x 16 Dual-Port Static RAM with Interrupt
Industrial and Commercial Temperature Ranges
AC Electrical Characteristics Over the
Operating Temperature and Supply Voltage Range (6)
70V261X25
Com'l
& Ind
70V261X35
Com'l Only
70V261X55
Com'l Only
Symbol
Parameter
Min.
Max.
Min.
Max.
Min.
Max.
Unit
BUSY TIMING (M/ S = V IH )
t BAA
t BDA
t BAC
t BDC
BUSY Access Time from Address Match
BUSY Disable Time from Address Not Match
BUSY Access Time from Chip Enable Low
BUSY Disable Time from Chip Enable High
____
____
____
____
25
25
25
25
____
____
____
____
35
35
35
35
____
____
____
____
45
45
45
45
ns
ns
ns
ns
t APS
Arbitration Priority Set-up Time
(2)
5
____
5
____
5
____
ns
t BDD
t WH
BUSY Disable to Valid Data
Write Hold After BUSY (5)
(3)
____
20
35
____
____
25
40
____
____
25
50
____
ns
ns
BUSY INPUT TIMING (M/ S = VIL)
Write Hold After BUSY
t WB
t WH
BUSY Input to Write (4)
(5)
0
20
____
____
0
25
____
____
0
25
____
____
ns
ns
PORT-TO-PORT DELAY TIMING
t WDD
Write Pulse to Data Delay (1)
____
55
____
65
____
85
ns
t DDD
Write Data Valid to Read Data Delay
(1)
____
50
____
60
____
80
ns
NOTES:
1. Port-to-port delay through RAM cells from writing port to reading port, refer to "Timing Waveform of Write with Port-to-Port Read and BUSY (M/ S = V IH )".
2. To ensure that the earlier of the two ports wins.
3. t BDD is a calculated parameter and is the greater of 0, t WDD – t WP (actual) or t DDD – t DW (actual).
4. To ensure that the write cycle is inhibited on port "B" during contention on port "A".
5. To ensure that a write cycle is completed on port "B" after contention on port "A".
6. "X" in part number indicates power rating (S or L).
Timing Waveform of write with Port-to-Port Read and BUSY (2,4,5)
t WC
2945 tbl 13
ADDR "A"
MATCH
t WP
R/ W "A"
DATA IN "A"
t DW
VALID
t DH
ADDR "B"
t APS
(1)
MATCH
BUSY "B"
t BAA
t WDD
t BDA
t BDD
DATA OUT "B"
NOTES:
1. To ensure that the earlier of the two ports wins. t APS is ignored for M/ S = V IL (SLAVE).
t DDD
(3)
VALID
3040 drw 11
2. CE L = CE R = V IL
3. OE = V IL for the reading port.
4. If M/ S = V IL (SLAVE), then BUSY is an input ( BUSY "A" = V IH and BUSY "B" = "don't care", for this example).
5. All timing is the same for left and right ports. Port "A" may be either the left or right port. Port "B" is the port opposite from port "A".
10
6.42
相关PDF资料
PDF描述
IDT70V26L35G IC SRAM 256KBIT 35NS 84PGA
IDT70V27S15PF IC SRAM 512KBIT 15NS 100TQFP
IDT70V28L20PFGI IC SRAM 1MBIT 20NS 100TQFP
IDT70V3319S166PRFG IC SRAM 4MBIT 166MHZ 128TQFP
IDT70V3379S5PRFI IC SRAM 576KBIT 5NS 128TQFP
相关代理商/技术参数
参数描述
IDT70V261L25PFGI8 功能描述:IC SRAM 256KBIT 25NS 100TQFP RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口,同步 存储容量:1.125M(32K x 36) 速度:5ns 接口:并联 电源电压:3.15 V ~ 3.45 V 工作温度:-40°C ~ 85°C 封装/外壳:256-LBGA 供应商设备封装:256-CABGA(17x17) 包装:带卷 (TR) 其它名称:70V3579S5BCI8
IDT70V261L25PFI 功能描述:IC SRAM 256KBIT 25NS 100TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:2,500 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:1K (128 x 8) 速度:100kHz 接口:UNI/O?(单线) 电源电压:1.8 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-TSSOP,8-MSOP(0.118",3.00mm 宽) 供应商设备封装:8-MSOP 包装:带卷 (TR)
IDT70V261L25PFI8 功能描述:IC SRAM 256KBIT 25NS 100TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口,同步 存储容量:1.125M(32K x 36) 速度:5ns 接口:并联 电源电压:3.15 V ~ 3.45 V 工作温度:-40°C ~ 85°C 封装/外壳:256-LBGA 供应商设备封装:256-CABGA(17x17) 包装:带卷 (TR) 其它名称:70V3579S5BCI8
IDT70V261L35PF 功能描述:IC SRAM 256KBIT 35NS 100TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口,同步 存储容量:1.125M(32K x 36) 速度:5ns 接口:并联 电源电压:3.15 V ~ 3.45 V 工作温度:-40°C ~ 85°C 封装/外壳:256-LBGA 供应商设备封装:256-CABGA(17x17) 包装:带卷 (TR) 其它名称:70V3579S5BCI8
IDT70V261L35PF8 功能描述:IC SRAM 256KBIT 35NS 100TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:45 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口,异步 存储容量:128K(8K x 16) 速度:15ns 接口:并联 电源电压:3 V ~ 3.6 V 工作温度:0°C ~ 70°C 封装/外壳:100-LQFP 供应商设备封装:100-TQFP(14x14) 包装:托盘 其它名称:70V25S15PF