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| 型号： | IDT70V3569S5DRI |
| 厂商： | IDT, Integrated Device Technology Inc |
| 文件页数： | 5/17页 |
| 文件大小： | 0K |
| 描述： | IC SRAM 576KBIT 5NS 208QFP |
| 标准包装： | 6 |
| 格式 - 存储器： | RAM |
| 存储器类型： | SRAM - 双端口，同步 |
| 存储容量： | 576K（16K x 36） |
| 速度： | 5ns |
| 接口： | 并联 |
| 电源电压： | 3.15 V ~ 3.45 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 208-BFQFP |
| 供应商设备封装： | 208-PQFP（28x28） |
| 包装： | 托盘 |
| 其它名称： | 70V3569S5DRI |
IDT70V3569S
High-Speed 16K x 36 Dual-Port Synchronous Pipelined Static RAM
Pin Names
Industrial and Commercial Temperature Ranges
Left Port
CE 0L , CE 1L
R/ W L
OE L
A 0L - A 13L
I/O 0L - I/O 35L
CLK L
ADS L
CNTEN L
Right Port
CE 0R , CE 1R
R/ W R
OE R
A 0R - A 13R
I/O 0R - I/O 35R
CLK R
ADS R
CNTEN R
Names
Chip Enables
Read/Write Enable
Output Enable
Address
Data Input/Output
Clock
Address Strobe Enable
Counter Enable
CNTRST L
BE 0L - BE 3L
V DDQL
OPT L
CNTRST R
BE 0R - BE 3R
V DDQR
OPT R
V DD
Counter Reset
Byte Enables (9-bit bytes)
Power (I/O Bus) (3.3V or 2.5V) (1)
Option for selection V DDQX (1,2)
Power (3.3V) (1)
NOTES:
1. V DD , OPT X , and V DDQX must be set to appropriate operating levels prior to
applying inputs on the I/Os and controls for that port.
2. OPT X selects the operating voltage levels for the I/Os and controls on that port.
If OPT X is set to VIH (3.3V), then that port's I/Os and controls will operate at 3.3V
levels and V DDQX must be supplied at 3.3V. If OPT X is set to VIL (0V), then that
port's I/Os and controls will operate at 2.5V levels and V DDQX must be supplied
at 2.5V. The OPT pins are independent of one another—both ports can operate
V SS
Ground
(0V)
at 3.3V levels, both can operate at 2.5V levels, or either can operate at 3.3V
with the other at 2.5V.
4831 tbl 01
Truth Table I—Read/Write and Enable Control (1,2,3,4)
Byte 3
Byte 2
Byte 1
Byte 0
OE
X
X
X
X
X
X
X
X
X
X
L
L
L
L
L
L
L
H
CLK
↑
↑
↑
↑
↑
↑
↑
↑
↑
↑
↑
↑
↑
↑
↑
↑
↑
↑
CE 0
H
X
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
CE 1
X
L
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
BE 3
X
X
H
H
H
H
L
H
L
L
H
H
H
L
H
L
L
L
BE 2
X
X
H
H
H
L
H
H
L
L
H
H
L
H
H
L
L
L
BE 1
X
X
H
H
L
H
H
L
H
L
H
L
H
H
L
H
L
L
BE 0
X
X
H
L
H
H
H
L
H
L
L
H
H
H
L
H
L
L
R/ W
X
X
X
L
L
L
L
L
L
L
H
H
H
H
H
H
H
X
I/O 27-35
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
D IN
High-Z
D IN
D IN
High-Z
High-Z
High-Z
D OUT
High-Z
D OUT
D OUT
High-Z
I/O 18-26
High-Z
High-Z
High-Z
High-Z
High-Z
D IN
High-Z
High-Z
D IN
D IN
High-Z
High-Z
D OUT
High-Z
High-Z
D OUT
D OUT
High-Z
I/O 9-17
High-Z
High-Z
High-Z
High-Z
D IN
High-Z
High-Z
D IN
High-Z
D IN
High-Z
D OUT
High-Z
High-Z
D OUT
High-Z
D OUT
High-Z
I/O 0-8
High-Z
High-Z
High-Z
D IN
High-Z
High-Z
High-Z
D IN
High-Z
D IN
D OUT
High-Z
High-Z
High-Z
D OUT
High-Z
D OUT
High-Z
MODE
Deselected –Power Down
Deselected –Power Down
All Bytes Deselected
Write to Byte 0 Only
Write to Byte 1 Only
Write to Byte 2 Only
Write to Byte 3 Only
Write to Lower 2 Bytes Only
Write to Upper 2 bytes Only
Write to All Bytes
Read Byte 0 Only
Read Byte 1 Only
Read Byte 2 Only
Read Byte 3 Only
Read Lower 2 Bytes Only
Read Upper 2 Bytes Only
Read All Bytes
Outputs Disabled
NOTES:
1. "H" = V IH, "L" = V IL, "X" = Don't Care.
2. ADS , CNTEN , CNTRST = X.
3. OE is an asynchronous input signal.
4. It is possible to read or write any combination of bytes during a given access. A few representative samples have been illustrated here.
5
6.42
4831 tbl 02
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相关代理商/技术参数 |
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| IDT70V3569S6BAI | 制造商:Integrated Device Technology Inc 功能描述: |
| IDT70V3569S6BC | 功能描述:IC SRAM 576KBIT 6NS 256BGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口，同步 存储容量:1.125M（32K x 36） 速度:5ns 接口:并联 电源电压:3.15 V ~ 3.45 V 工作温度:-40°C ~ 85°C 封装/外壳:256-LBGA 供应商设备封装:256-CABGA（17x17） 包装:带卷 (TR) 其它名称:70V3579S5BCI8 |
| IDT70V3569S6BC8 | 功能描述:IC SRAM 576KBIT 6NS 256BGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口，同步 存储容量:1.125M（32K x 36） 速度:5ns 接口:并联 电源电压:3.15 V ~ 3.45 V 工作温度:-40°C ~ 85°C 封装/外壳:256-LBGA 供应商设备封装:256-CABGA（17x17） 包装:带卷 (TR) 其它名称:70V3579S5BCI8 |
| IDT70V3569S6BF | 功能描述:IC SRAM 576KBIT 6NS 208FBGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口，同步 存储容量:1.125M（32K x 36） 速度:5ns 接口:并联 电源电压:3.15 V ~ 3.45 V 工作温度:-40°C ~ 85°C 封装/外壳:256-LBGA 供应商设备封装:256-CABGA（17x17） 包装:带卷 (TR) 其它名称:70V3579S5BCI8 |
| IDT70V3569S6BF8 | 功能描述:IC SRAM 576KBIT 6NS 208FBGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口，同步 存储容量:1.125M（32K x 36） 速度:5ns 接口:并联 电源电压:3.15 V ~ 3.45 V 工作温度:-40°C ~ 85°C 封装/外壳:256-LBGA 供应商设备封装:256-CABGA（17x17） 包装:带卷 (TR) 其它名称:70V3579S5BCI8 |
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