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参数资料
型号： IDT70V3569S5DRI
厂商： IDT, Integrated Device Technology Inc
文件页数： 6/17页
文件大小： 0K
描述： IC SRAM 576KBIT 5NS 208QFP
标准包装： 6
格式 - 存储器： RAM
存储器类型： SRAM - 双端口，同步
存储容量： 576K（16K x 36）
速度： 5ns
接口： 并联
电源电压： 3.15 V ~ 3.45 V
工作温度： -40°C ~ 85°C
封装/外壳： 208-BFQFP
供应商设备封装： 208-PQFP（28x28）
包装： 托盘
其它名称： 70V3569S5DRI
IDT70V3569S
High-Speed 16K x 36 Dual-Port Synchronous Pipelined Static RAM
Truth Table II—Address Counter Control (1,2)
Industrial and Commercial Temperature Ranges
Previous
Addr
L
L
L
Address
X
An
An
X
Address
X
X
Ap
Ap
Used
0
An
Ap
Ap + 1
CLK (6)
↑
↑
↑
↑
ADS
X
(4)
H
H
CNTEN
X
X
H
(5)
CNTRST
(4)
H
H
H
I/O (3)
D I/O (0)
D I/O (n)
D I/O (p)
D I/O (p+1)
MODE
Counter Reset to Address 0
External Address Used
External Address Blocked —Counter disabled (Ap reused)
Counter Enabled—Internal Address generation
NOTES:
1. "H" = V IH, "L" = V IL, "X" = Don't Care.
2. Read and write operations are controlled by the appropriate setting of R/ W , CE 0 , CE 1 , BE n and OE .
3. Outputs are in Pipelined mode: the data out will be delayed by one cycle.
4. ADS and CNTRST are independent of all other memory control signals including CE 0 , CE 1 and BE n
5. The address counter advances if CNTEN = V IL on the rising edge of CLK, regardless of all other memory control signals including CE 0 , CE 1 , BE n.
4831 tbl 03
Recommended Operating
Temperature and Supply Voltage (1)
Recommended DC Operating
Conditions with V DDQ at 2.5V
Ambient
Symbol
Parameter
Min.
Typ.
Max.
Unit
Grade
Temperature
GND
V DD
V DD
Core Supply Voltage
3.15
3.3
3.45
V
Commercial
Industrial
0 O C to +70 O C
-40 O C to +85 O C
0V
0V
3.3V + 150mV
3.3V + 150mV
V DDQ
V SS
I/O Supply Voltage
Ground
(3)
2.375
0
2.5
0
2.625
0
V
V
4831 tbl 04
NOTES:
1. Industrial temperature: for specific speeds, packages and powers contact your
sales office.
V IH
V IH
Input High Voltage (3)
(Address & Control Inputs)
Input High Voltage - I/O (3)
1.7
1.7
____
____
V DDQ + 125mV (2)
V DDQ + 125mV (2)
V
V
V IL
Input Low Voltage
-0.3
(1)
____
0.7
V
NOTES:
4831 tbl 05a
Absolute Maximum Ratings (1)
1. V IL > -1.5V for pulse width less than 10 ns.
2. V TERM must not exceed V DDQ + 125mV.
3. To select operation at 2.5V levels on the I/Os and controls of a given port, the
Symbol
Rating
Commercial
Unit
OPT pin for that port must be set to V IL (0V), and V DDQX for that port must be
& Industrial
supplied as indicated above.
V TERM (2)
Terminal Voltage
-0.5 to +4.6
V
T BIAS
with Respect to
GND
Temperature
Under Bias
-55 to +125
o
C
Recommended DC Operating
Conditions with V DDQ at 3.3V
Symbol Parameter Min. Typ. Max.
Unit
T STG
Storage
Temperature
-65 to +150
o
C
V DD
Core Supply Voltage
3.15
3.3
3.45
V
I OUT
DC Output Current
50
mA
V DDQ
I/O Supply Voltage (3)
3.15
3.3
3.45
V
4831 tbl 06
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only and functional
V SS
V IH
Ground
Input High Voltage
(Address & Control Inputs) (3)
0
2.0
0
____
0
V DDQ + 150mV
(2)
V
V
operation of the device at these or any other conditions above those indicated
in the operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
V IH
V IL
Input High Voltage - I/O (3)
Input Low Voltage
2.0
-0.3 (1)
____
____
V DDQ + 150mV (2)
0.8
V
V
2. V TERM must not exceed V DD + 150mV for more than 25% of the cycle time or
4ns maximum, and is limited to < 20mA for the period of V TERM > V DD + 150mV.
NOTES:
4831 tbl 05b
1. V IL > -1.5V for pulse width less than 10 ns.
2. V TERM must not exceed V DDQ + 150mV.
3. To select operation at 3.3V levels on the I/Os and controls of a given port, the
OPT pin for that port must be set to V IH (3.3V), and V DDQX for that port must be
supplied as indicated above.
6.42
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相关代理商/技术参数
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IDT70V3569S6BAI 制造商:Integrated Device Technology Inc 功能描述:
IDT70V3569S6BC 功能描述:IC SRAM 576KBIT 6NS 256BGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口，同步 存储容量:1.125M（32K x 36） 速度:5ns 接口:并联 电源电压:3.15 V ~ 3.45 V 工作温度:-40°C ~ 85°C 封装/外壳:256-LBGA 供应商设备封装:256-CABGA（17x17） 包装:带卷 (TR) 其它名称:70V3579S5BCI8
IDT70V3569S6BC8 功能描述:IC SRAM 576KBIT 6NS 256BGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口，同步 存储容量:1.125M（32K x 36） 速度:5ns 接口:并联 电源电压:3.15 V ~ 3.45 V 工作温度:-40°C ~ 85°C 封装/外壳:256-LBGA 供应商设备封装:256-CABGA（17x17） 包装:带卷 (TR) 其它名称:70V3579S5BCI8
IDT70V3569S6BF 功能描述:IC SRAM 576KBIT 6NS 208FBGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口，同步 存储容量:1.125M（32K x 36） 速度:5ns 接口:并联 电源电压:3.15 V ~ 3.45 V 工作温度:-40°C ~ 85°C 封装/外壳:256-LBGA 供应商设备封装:256-CABGA（17x17） 包装:带卷 (TR) 其它名称:70V3579S5BCI8
IDT70V3569S6BF8 功能描述:IC SRAM 576KBIT 6NS 208FBGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口，同步 存储容量:1.125M（32K x 36） 速度:5ns 接口:并联 电源电压:3.15 V ~ 3.45 V 工作温度:-40°C ~ 85°C 封装/外壳:256-LBGA 供应商设备封装:256-CABGA（17x17） 包装:带卷 (TR) 其它名称:70V3579S5BCI8
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