参数资料
型号: IDT70V9369L7PFI
厂商: IDT, Integrated Device Technology Inc
文件页数: 4/16页
文件大小: 0K
描述: IC SRAM 288KBIT 7NS 100TQFP
标准包装: 90
格式 - 存储器: RAM
存储器类型: SRAM - 双端口,同步
存储容量: 288K(16K x 18)
速度: 7ns
接口: 并联
电源电压: 3 V ~ 3.6 V
工作温度: -40°C ~ 85°C
封装/外壳: 100-LQFP
供应商设备封装: 100-TQFP(14x14)
包装: 托盘
其它名称: 70V9369L7PFI
IDT70V9369L
High-Speed 3.3V 16K x 18 Dual-Port Synchronous Pipelined Static RAM
Truth Table II—Address Counter Control (1,2,6)
Industrial and Commercial Temperature Ranges
Previous
Internal
L
L
Address
An
X
X
X
Internal
Address
X
An
An + 1
X
Address
Used
An
An + 1
An + 1
A 0
CLK (6 )
ADS
L (4)
H
H
X
CNTEN
X
(5)
H
X
CNTRST
H
H
H
(4)
I/O (3)
D I/O (n)
D I/O (n+1)
D I/O (n+1)
D I/O (0)
MODE
External Address Used
Counter Enabled —Internal Address generation
External Address Blocked —Counter disabled (An + 1 reused)
Counter Reset to Address 0
NOTES:
1. "H" = V IH, "L" = V IL, "X" = Don't Care.
2. CE 0 , LB , UB , and OE = V IL ; CE 1 and R/ W = V IH .
3. Outputs configured in Flow-Through Output mode; if outputs are in Pipelined mode the data out will be delayed by one cycle.
4. ADS and CNTRST are independent of all other signals including CE 0 , CE 1 , UB and LB .
5. The address counter advances if CNTEN = V IL on the rising edge of CLK, regardless of all other signals including CE 0 , CE 1 , UB and LB .
6. While an external address is being loaded ( ADS = V IL ), R/ W = V IH is recommended to ensure data is not written arbitrarily.
5648 tbl 03
Recommended Operating
Temperature and Supply Voltage (1)
Recommended DC Operating
Conditions
Grade
Commercial
Ambient
Temperature (1)
0 O C to +70 O C
GND
0V
V DD
3.3V + 0.3V
Symbol
V DD
Vss
Parameter
Supply Voltage
Ground
Min.
3.0
0
Typ.
3.3
0
Max.
3.6
0
Unit
V
V
Industrial
-40 O C to +85 O C
0V
3.3V + 0.3V
V IH
Input High Voltage
2.0V
____
V DD +0.3V
(2)
V
-0.3
NOTES:
5648 tbl 04
V IL
Input Low Voltage
(1)
____
0.8
V
1. This is the parameter T A . This is the "instant on" case temperature.
NOTES:
1. V IL > -1.5V for pulse width less than 10 ns.
2. V TERM must not exceed V DD +0.3V.
5648 tbl 05
Absolute Maximum Ratings (1)
Symbol Rating Commercial
& Industrial
Unit
Capacitance (1)
(T A = +25°C, f = 1.0MH Z )
V TERM (2)
Terminal Voltage
with Respect to
GND
-0.5 to +4.6
V
Symbol
Parameter
Conditions
Max.
Unit
C OUT
T BIAS (3)
Temperature
Under Bias
-55 to +125
o
C
C IN
(2)
Input Capacitance
Output Capacitance
V IN = 0V
V OUT = 0V
9
10
pF
pF
T STG
Storage
Temperature
-65 to +150
o
C
NOTES:
5648 tbl 07
1. These parameters are determined by device characterization, but are not
T JN
Junction Temperature
+150
o
C
production tested.
I OUT
DC Output Current
50
mA
2. C OUT also references C I/O .
NOTES:
5648 tbl 06
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated
in the operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
2. V TERM must not exceed V DD +0.3V.
3. Ambient Temperature Under DC Bias. No AC Conditions. Chip deselect.
6.42
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